Scholarlink

<p>Thin silicon nitride integrated photonics platforms rely on weakly confining waveguides and thick oxide cladding layers to enable ultra-low-optical losses on chip. Due to these favorable properties, this technology is seeing increased use in chip-scale systems tasked with manipulating and controlling classical and quantum optical systems. Phase-modulators play a crucial role in the low-noise control loops of such systems, but optically broadband phase modulators remain elusive as the same properties used to enable ultra-low-optical losses make interaction with the optical mode difficult. Here we show an unreleased and optically broadband acousto-optic modulator architecture on this platform enabled by long modulation lengths in a compact spiral structure. These devices achieve a <i>V</i><sub><i>π</i></sub> of 8.98 V at a modulation frequency of 704 MHz across an optical bandwidth exceeding 90 nm at telecom wavelengths. We demonstrate their use as part of the control loop in an optomechanical sensing system.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Broadband acousto-optic modulators on Silicon Nitride

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年12月17日

查看全文
  • Scott E. Kenning,
  • Tzu-Han Chang,
  • Alaina G. Attanasio,
  • Warren Jin,
  • Avi Feshali,
  • Yu Tian,
  • Mario Paniccia,
  • Sunil A. Bhave

摘要

Thin silicon nitride integrated photonics platforms rely on weakly confining waveguides and thick oxide cladding layers to enable ultra-low-optical losses on chip. Due to these favorable properties, this technology is seeing increased use in chip-scale systems tasked with manipulating and controlling classical and quantum optical systems. Phase-modulators play a crucial role in the low-noise control loops of such systems, but optically broadband phase modulators remain elusive as the same properties used to enable ultra-low-optical losses make interaction with the optical mode difficult. Here we show an unreleased and optically broadband acousto-optic modulator architecture on this platform enabled by long modulation lengths in a compact spiral structure. These devices achieve a Vπ of 8.98 V at a modulation frequency of 704 MHz across an optical bandwidth exceeding 90 nm at telecom wavelengths. We demonstrate their use as part of the control loop in an optomechanical sensing system.