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<p>Van der Waals antiferromagnetic semiconductors are promising platforms for energy-efficient two-dimensional spintronics. However, their intrinsic spin degeneracy and the difficulty of achieving electrical spin control pose major challenges for practical device implementation. Here, we present a distinct spintronic platform based on an antiferromagnetic semiconductor CrSBr, in which carrier doping induced by gate-controlled intercalation drives a reversible, zero-field antiferromagnetic to ferromagnetic phase transition, enabling direct and full electrical control of both magnetic order and spin polarization. Exploiting this transition, we engineer CrSBr/graphene heterostructures that leverage interfacial charge transfer to spatially pattern magnetic phases, resulting in lateral spin valves with gate-controlled spin polarization reversal, all without ferromagnetic contacts. Crucially, this mechanism also enables electrical switching of magnetic order via spin-transfer torque at ultralow current densities (&lt;10<sup>3</sup> A/cm<sup>2</sup>), demonstrating its efficiency and device compatibility. These findings open a new paradigm for reconfigurable, all-electrical spintronic systems based on van der Waals antiferromagnetic semiconductors.</p>

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Doping-induced magnetic phase transition enables all-electrical spin control in CrSBr

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月19日

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  • Guorui Zhao,
  • Yibin Zhao,
  • Yu Zhang,
  • Kunlin Yang,
  • Zejing Guo,
  • Jiaqi Liu,
  • Tuoyu Zhao,
  • Kun Yan,
  • Xiaobin Chen,
  • Qi Li,
  • Yingchun Cheng,
  • Cheng Zhang,
  • Zhe Wang,
  • Yi Liu,
  • Jianting Ye,
  • Jia-Wei Mei,
  • Zhe Yuan,
  • Wu Shi

摘要

Van der Waals antiferromagnetic semiconductors are promising platforms for energy-efficient two-dimensional spintronics. However, their intrinsic spin degeneracy and the difficulty of achieving electrical spin control pose major challenges for practical device implementation. Here, we present a distinct spintronic platform based on an antiferromagnetic semiconductor CrSBr, in which carrier doping induced by gate-controlled intercalation drives a reversible, zero-field antiferromagnetic to ferromagnetic phase transition, enabling direct and full electrical control of both magnetic order and spin polarization. Exploiting this transition, we engineer CrSBr/graphene heterostructures that leverage interfacial charge transfer to spatially pattern magnetic phases, resulting in lateral spin valves with gate-controlled spin polarization reversal, all without ferromagnetic contacts. Crucially, this mechanism also enables electrical switching of magnetic order via spin-transfer torque at ultralow current densities (<103 A/cm2), demonstrating its efficiency and device compatibility. These findings open a new paradigm for reconfigurable, all-electrical spintronic systems based on van der Waals antiferromagnetic semiconductors.