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<p>While the internet of things (IoT) enhances global connectivity through trillions of sensors, the sensory signals are weak and require precise amplification and rapid transmission via thin-film transistor (TFT) interfaces, which must uphold high voltage gain and wide operating frequency range. In this work, we demonstrate a source-gated transistor (SGT) architecture integrating chemical vapor deposition (CVD)-grown monolayer MoS<sub>2</sub> with thin high-k dielectrics. This transistor achieves subthreshold operation with high intrinsic gain and wide operating frequency range, even at an 80 nm channel-length (L<sub>CH</sub>). The optimization of output resistance, transconductance and subthreshold swing yields an SGT intrinsic gain exceeding 2.4×10<sup>3</sup>, with no degradation as L<sub>CH</sub> scales from 1000 nm down to 80 nm. Additionally, benefitting from the ultra-short 80 nm L<sub>CH</sub>, microwave measurements show a high cut-off frequency of 208 MHz in the subthreshold regime. A monolithically integrated common-source amplifier operating in the subthreshold regime exhibits a high gain of 249 V/V at low supply voltage (0.5 V) and ultra-low power ( ~ 0.17 nW), indicating a promising path toward a universal high-performance transistor solution for high gain, high frequency, and ultra-low power applications.</p>

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Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月11日

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  • Menggan Liu,
  • Jiebin Niu,
  • Guanhua Yang,
  • Rikang Zhao,
  • Kaifei Chen,
  • Wendong Lu,
  • Fuxi Liao,
  • Zhenhua Wu,
  • Chen Jiang,
  • Di Geng,
  • Nianduan Lu,
  • Arokia Nathan,
  • Ling Li,
  • Ming Liu

摘要

While the internet of things (IoT) enhances global connectivity through trillions of sensors, the sensory signals are weak and require precise amplification and rapid transmission via thin-film transistor (TFT) interfaces, which must uphold high voltage gain and wide operating frequency range. In this work, we demonstrate a source-gated transistor (SGT) architecture integrating chemical vapor deposition (CVD)-grown monolayer MoS2 with thin high-k dielectrics. This transistor achieves subthreshold operation with high intrinsic gain and wide operating frequency range, even at an 80 nm channel-length (LCH). The optimization of output resistance, transconductance and subthreshold swing yields an SGT intrinsic gain exceeding 2.4×103, with no degradation as LCH scales from 1000 nm down to 80 nm. Additionally, benefitting from the ultra-short 80 nm LCH, microwave measurements show a high cut-off frequency of 208 MHz in the subthreshold regime. A monolithically integrated common-source amplifier operating in the subthreshold regime exhibits a high gain of 249 V/V at low supply voltage (0.5 V) and ultra-low power ( ~ 0.17 nW), indicating a promising path toward a universal high-performance transistor solution for high gain, high frequency, and ultra-low power applications.