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<p>The inferior heterojunction quality and misaligned energy levels at the buffer/absorber interface cause severe interface recombination and large open-circuit voltage (<i>V</i><sub>OC</sub>) loss, limiting the power conversion efficiency (PCE) of antimony selenosulfide (Sb<sub>2</sub>(S,Se)<sub>3</sub>) solar cells. Here, we develop a field-effect passivation strategy by introducing a low-work-function Ta<sub>2</sub>O<sub>5</sub> dielectric layer between the CdS and Sb<sub>2</sub>(S,Se)<sub>3</sub> layers. This Ta<sub>2</sub>O<sub>5</sub> layer serves as an optimal substrate for growing highly crystalline Sb<sub>2</sub>(S,Se)<sub>3</sub> films while also enhancing interfacial charge transport. The positive fixed charges in Ta<sub>2</sub>O<sub>5</sub> strengthen the built-in electric field and promotes electrons extraction while suppressing holes accumulation at the interface, thereby substantially suppressing non-radiative recombination probabilities. Implementing this passivation strategy yields a record PCE of 10.95% (10.65% certified) an <i>V</i><sub>OC</sub> of 695 mV, corresponding to a remarkably low voltage deficit. This work establishes a universal physical passivation paradigm for interface quality optimization and <i>V</i><sub>OC</sub> loss mitigation in high-performance Sb<sub>2</sub>(S,Se)<sub>3</sub> photovoltaics.</p>

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Field-effect passivation for minimized voltage loss in highly efficient antimony selenosulfide solar cells

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月6日

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  • Anwen Gong,
  • Cong Liu,
  • Jiexi Yang,
  • Binghuan Li,
  • Shilin Yang,
  • Rongshan Yang,
  • Yousheng Wang,
  • Kai Shen,
  • Qifan Xue,
  • Zhiqiang Li,
  • Jing Wang,
  • Bingsuo Zou,
  • Yaohua Mai

摘要

The inferior heterojunction quality and misaligned energy levels at the buffer/absorber interface cause severe interface recombination and large open-circuit voltage (VOC) loss, limiting the power conversion efficiency (PCE) of antimony selenosulfide (Sb2(S,Se)3) solar cells. Here, we develop a field-effect passivation strategy by introducing a low-work-function Ta2O5 dielectric layer between the CdS and Sb2(S,Se)3 layers. This Ta2O5 layer serves as an optimal substrate for growing highly crystalline Sb2(S,Se)3 films while also enhancing interfacial charge transport. The positive fixed charges in Ta2O5 strengthen the built-in electric field and promotes electrons extraction while suppressing holes accumulation at the interface, thereby substantially suppressing non-radiative recombination probabilities. Implementing this passivation strategy yields a record PCE of 10.95% (10.65% certified) an VOC of 695 mV, corresponding to a remarkably low voltage deficit. This work establishes a universal physical passivation paradigm for interface quality optimization and VOC loss mitigation in high-performance Sb2(S,Se)3 photovoltaics.