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<p>Sensitive avalanche photodetectors (APDs) that operate within the ultraviolet spectrum are critically required for applications in detecting fire and deep-space exploration. However, the development of such devices faces significant challenges, including high avalanche breakdown voltage, the necessity for complex quenching circuits, and thermal runaway associated with Geiger-mode avalanche operation. To mitigate these issues, we report on a 4H-SiC APD design utilizing micro-holes (MHs) structures and Al nano-triangles (NTs) to enhance surface electric field driven by strong localized surface plasmon excitations and lightning-rod effect. The device demonstrates a low avalanche breakdown voltage of approximately 14.5 V, a high detectivity of 2 × 10<sup>13</sup> Jones, a nanosecond-level response time, and repeated stable detections without the requirement of a quenching circuit. Collectively, when compared with the conventional wide-bandgap-based APDs, this device achieves a reduction in avalanche breakdown voltage by an order of magnitude. Consequently, the proposed APD configuration presents a promising candidate for ultraviolet detection and integrated optoelectronic circuits.</p>

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Local avalanche photodetectors driven by lightning-rod effect and surface plasmon excitations

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年12月3日

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  • Zhao Fu,
  • Jia Liu,
  • Meng Yuan,
  • Jiafa Cai,
  • Rongdun Hong,
  • Xiaping Chen,
  • Dingqu Lin,
  • Shaoxiong Wu,
  • Yuning Zhang,
  • Zhengyun Wu,
  • Zhanwei Shen,
  • Zhijie Wang,
  • Jicheng Wang,
  • Mingkun Zhang,
  • Zhilin Yang,
  • Deyi Fu,
  • Feng Zhang,
  • Rong Zhang

摘要

Sensitive avalanche photodetectors (APDs) that operate within the ultraviolet spectrum are critically required for applications in detecting fire and deep-space exploration. However, the development of such devices faces significant challenges, including high avalanche breakdown voltage, the necessity for complex quenching circuits, and thermal runaway associated with Geiger-mode avalanche operation. To mitigate these issues, we report on a 4H-SiC APD design utilizing micro-holes (MHs) structures and Al nano-triangles (NTs) to enhance surface electric field driven by strong localized surface plasmon excitations and lightning-rod effect. The device demonstrates a low avalanche breakdown voltage of approximately 14.5 V, a high detectivity of 2 × 1013 Jones, a nanosecond-level response time, and repeated stable detections without the requirement of a quenching circuit. Collectively, when compared with the conventional wide-bandgap-based APDs, this device achieves a reduction in avalanche breakdown voltage by an order of magnitude. Consequently, the proposed APD configuration presents a promising candidate for ultraviolet detection and integrated optoelectronic circuits.