Scholarlink

<p>Extending electro-optic bandwidth of native silicon photonic devices well beyond 100 GHz remains a challenge. We demonstrate a scalable C-band silicon photonic platform monolithically integrating ultra-high speed germanium–silicon electro absorption modulators and fin photodiodes. We apply a delta-layer doping process to incorporate Si into Ge. Two electro-absorption modulator variants with lengths of 40 µm and 20 µm exhibit electro optic 3-dB bandwidths of 100 GHz and well beyond 110 GHz, respectively. Co-integrated GeSi-fin photodiodes achieve 3-dB bandwidths of more than 200 GHz. Involving only platform integrated absorption modulators and fin photodiodes, we demonstrate open-eyes in a large signal experiment at 140 Gbit/s. This work establishes an important milestone for next generation optical communication technology.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Monolithic electro-optic platform on silicon with bandwidth of 100 GHz and beyond

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年11月27日

查看全文
  • Daniel Steckler,
  • Stefan Lischke,
  • Yuji Yamamoto,
  • Wei-Chen Wen,
  • Anna Peczek,
  • Johannes Beyer,
  • Aleksandra Kroh,
  • Oksana Fursenko,
  • Florian Bärwolf,
  • Steffen Marschmeyer,
  • Philipp Kulse,
  • Dirk Wolansky,
  • Lars Zimmermann

摘要

Extending electro-optic bandwidth of native silicon photonic devices well beyond 100 GHz remains a challenge. We demonstrate a scalable C-band silicon photonic platform monolithically integrating ultra-high speed germanium–silicon electro absorption modulators and fin photodiodes. We apply a delta-layer doping process to incorporate Si into Ge. Two electro-absorption modulator variants with lengths of 40 µm and 20 µm exhibit electro optic 3-dB bandwidths of 100 GHz and well beyond 110 GHz, respectively. Co-integrated GeSi-fin photodiodes achieve 3-dB bandwidths of more than 200 GHz. Involving only platform integrated absorption modulators and fin photodiodes, we demonstrate open-eyes in a large signal experiment at 140 Gbit/s. This work establishes an important milestone for next generation optical communication technology.