<p>Dielectric waveguides are an emerging platform for terahertz (THz) integrated circuits, but a key challenge for dense integration is the realization of terminations that enable both multi-port device characterization and elimination of electromagnetic interference. Here, we demonstrate a compact, broadband termination by coating silicon waveguides with ultrathin single-walled carbon nanotube (SWCNT) films. Fabricated via a floating-catalyst (aerosol) chemical vapor deposition process, film thicknesses vary from 2 to 53 nm and are characterized in 140-220 GHz. A 53 nm thick film introduces up to 47 dB of attenuation while maintaining over 20 dB reflection loss, confirming nearly reflection-free absorption. Shielding analysis shows absorption dominates over reflection, and a record specific shielding efficiency of 5.5&#xa0;×&#xa0;10<sup>9</sup> dB cm<sup>2</sup> g<sup>−1</sup> is achieved. This approach offers a footprint-efficient solution for high-density THz circuits without bulky, radiative terminations.</p>

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Ultrathin Single-Walled Carbon Nanotube Surface Wave Absorbers for Terahertz Dielectric Waveguides

  • Nikolaos Xenidis,
  • Mehrdad Rezaei Golghand,
  • Nikita I. Raginov,
  • Joachim Oberhammer,
  • Dmitry V. Krasnikov,
  • Albert G. Nasibulin,
  • Dmitry V. Lioubtchenko

摘要

Dielectric waveguides are an emerging platform for terahertz (THz) integrated circuits, but a key challenge for dense integration is the realization of terminations that enable both multi-port device characterization and elimination of electromagnetic interference. Here, we demonstrate a compact, broadband termination by coating silicon waveguides with ultrathin single-walled carbon nanotube (SWCNT) films. Fabricated via a floating-catalyst (aerosol) chemical vapor deposition process, film thicknesses vary from 2 to 53 nm and are characterized in 140-220 GHz. A 53 nm thick film introduces up to 47 dB of attenuation while maintaining over 20 dB reflection loss, confirming nearly reflection-free absorption. Shielding analysis shows absorption dominates over reflection, and a record specific shielding efficiency of 5.5 × 109 dB cm2 g−1 is achieved. This approach offers a footprint-efficient solution for high-density THz circuits without bulky, radiative terminations.