Scholarlink

<p>Producing inch-scale, binder-free ultrahard diamond presents a formidable challenge due to the limitations of the conventional high-pressure and high-temperature method. Here, we report a customized microwave plasma chemical vapor deposition technique with high-frequency gas-switching control. By periodically introducing nitrogen, a transient local non-equilibrium growth mode is established, enabling the synthesis of free-standing ultrahard diamond wafers up to 3 mm thick and 5 inches in diameter. The wafers exhibit a Vickers hardness of ~208.3 GPa, comparable to the hardest nano-twinned diamonds, and show exceptional wear resistance—abrasive ratio ~7 times higher than polycrystalline diamond substrate. High-resolution transmission electron microscopy reveals an ultra-dense three-dimensional interlocked stacking fault network (density up to 4.3×10¹² cm⁻²), contributing to superior mechanical properties. This process also allows deposition on commonly used three-dimensional tool surfaces. This work provides a scalable strategy for producing ultrahard, inch-scale diamond suitable for demanding applications in precision machining, semiconductor and aerospace industries.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Inch-scale ultrahard diamond wafer with 200 GPa hardness via high-frequency pulsed local non-equilibrium growth

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年12月13日

查看全文
  • Juping Tu,
  • Jiayi Li,
  • Yong Wang,
  • Yun Zhao,
  • Jinlong Liu,
  • Junjun Wei,
  • Liangxian Chen,
  • Jianjun Zhang,
  • Yang Lu,
  • Chengming Li

摘要

Producing inch-scale, binder-free ultrahard diamond presents a formidable challenge due to the limitations of the conventional high-pressure and high-temperature method. Here, we report a customized microwave plasma chemical vapor deposition technique with high-frequency gas-switching control. By periodically introducing nitrogen, a transient local non-equilibrium growth mode is established, enabling the synthesis of free-standing ultrahard diamond wafers up to 3 mm thick and 5 inches in diameter. The wafers exhibit a Vickers hardness of ~208.3 GPa, comparable to the hardest nano-twinned diamonds, and show exceptional wear resistance—abrasive ratio ~7 times higher than polycrystalline diamond substrate. High-resolution transmission electron microscopy reveals an ultra-dense three-dimensional interlocked stacking fault network (density up to 4.3×10¹² cm⁻²), contributing to superior mechanical properties. This process also allows deposition on commonly used three-dimensional tool surfaces. This work provides a scalable strategy for producing ultrahard, inch-scale diamond suitable for demanding applications in precision machining, semiconductor and aerospace industries.