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<p>Molecular doping is essential for optimizing carrier concentration, charge mobility, and energy levels of organic semiconductors (OSCs), thereby enhancing device performance. However, efficient n(electron)-type doping remains challenging, as conventional techniques often fail to achieve high doping efficiency with minimal counterion-induced disorder under mild conditions. Here, we present a catalysed n-doping strategy for OSCs using air-stable, cost-effective, and commercially available soluble organometallic complexes, such as Pt(COD)Cl<sub>2</sub>, which enable rapid n-dopant activation with just 10 s of annealing at 120 <sup>o</sup>C. This approach demonstrates excellent generality across diverse OSCs, dopants and catalysts, achieving electrical conductivities exceeding 230 S cm<sup>-1</sup> with up to 10-fold improvements over existing catalyst-assisted n-doping methods. Importantly, it mitigates counterion-induced structural disorder in doped OSCs, leading to a high power factor of 175 µW m<sup>-1</sup> K<sup>-2</sup> and thermoelectric figure of merit (ZT) of 0.43 at room temperature for catalytically <i>N</i>-DMBI-doped polymer films. This strategy addresses long-standing challenges in n-doping while unlocking new avenues for next-generation organic electronics.</p>

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n-doping of organic semiconductors catalysed by organometallic complexes

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月12日

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  • Sergio Gámez-Valenzuela,
  • Jianfeng Li,
  • Kui Feng,
  • Bin Liu,
  • Suxiang Ma,
  • Yongchun Li,
  • Yani Lu,
  • Xiage Zhang,
  • Bolin Li,
  • Sang Young Jeong,
  • Hong Wang,
  • Han Young Woo,
  • Hanqiang Wang,
  • Alessandro Motta,
  • Xugang Guo

摘要

Molecular doping is essential for optimizing carrier concentration, charge mobility, and energy levels of organic semiconductors (OSCs), thereby enhancing device performance. However, efficient n(electron)-type doping remains challenging, as conventional techniques often fail to achieve high doping efficiency with minimal counterion-induced disorder under mild conditions. Here, we present a catalysed n-doping strategy for OSCs using air-stable, cost-effective, and commercially available soluble organometallic complexes, such as Pt(COD)Cl2, which enable rapid n-dopant activation with just 10 s of annealing at 120 oC. This approach demonstrates excellent generality across diverse OSCs, dopants and catalysts, achieving electrical conductivities exceeding 230 S cm-1 with up to 10-fold improvements over existing catalyst-assisted n-doping methods. Importantly, it mitigates counterion-induced structural disorder in doped OSCs, leading to a high power factor of 175 µW m-1 K-2 and thermoelectric figure of merit (ZT) of 0.43 at room temperature for catalytically N-DMBI-doped polymer films. This strategy addresses long-standing challenges in n-doping while unlocking new avenues for next-generation organic electronics.