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<p>The polarization states of light-emitting devices in conventional semiconductors are typically deterministically fixed by optical transition selection rules. However, in emerging Weyl semiconductors, band-crossing Weyl nodes introduce exotic polarization contrasts, making emission polarization sensitive to carrier dynamics. Here, we demonstrate mid-infrared light-emitting diodes based on van der Waals tellurium, a Weyl semiconductor featuring a Weyl node precisely at the conduction band minimum (CBM). These devices demonstrate high polarization tunability, with linear polarization degrees continuously adjustable from ~100% (low carrier density) to 36% (high carrier density). First-principles calculations reveal that this tunability originates from polarization singularities induced by CBM-located Weyl nodes, where the polarization state is dynamically modulated by the quasi-Fermi level shift and hot-carrier recombination under varying injection densities. Our findings establish band-edge Weyl nodes as a promising platform for tunable polarized emitters and open alternative avenues for topological optoelectronics.</p>

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Dynamically tunable polarized mid-infrared light-emitting diodes from polarization singularities in a band-edge Weyl node

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月12日

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  • Junrong Zhang,
  • Fengyuan Xuan,
  • Jiexi Song,
  • Junsheng Xu,
  • Dong Wang,
  • Quanlong Zhang,
  • Qinghua Han,
  • Keyu Cheng,
  • Yaning Liang,
  • Xingang Hou,
  • Xiangyi Wang,
  • Jing Xu,
  • Yuan Gan,
  • Xicheng Yang,
  • Bingyan Ren,
  • Weijie Zhao,
  • Junyong Wang,
  • Kai Zhang

摘要

The polarization states of light-emitting devices in conventional semiconductors are typically deterministically fixed by optical transition selection rules. However, in emerging Weyl semiconductors, band-crossing Weyl nodes introduce exotic polarization contrasts, making emission polarization sensitive to carrier dynamics. Here, we demonstrate mid-infrared light-emitting diodes based on van der Waals tellurium, a Weyl semiconductor featuring a Weyl node precisely at the conduction band minimum (CBM). These devices demonstrate high polarization tunability, with linear polarization degrees continuously adjustable from ~100% (low carrier density) to 36% (high carrier density). First-principles calculations reveal that this tunability originates from polarization singularities induced by CBM-located Weyl nodes, where the polarization state is dynamically modulated by the quasi-Fermi level shift and hot-carrier recombination under varying injection densities. Our findings establish band-edge Weyl nodes as a promising platform for tunable polarized emitters and open alternative avenues for topological optoelectronics.