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<p>Tungsten diselenide (WSe<sub>2</sub>) is a promising <i>p</i>-type semiconductor limited by high contact resistance (<i>R</i><sub>C</sub>) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe<sub>2</sub> to chloroform provides simple and stable <i>p</i>-type doping. In monolayer WSe<sub>2</sub> transistors with Pd contacts, chloroform increases the maximum hole current by over 100× (&gt;200 µA/µm), reduces <i>R</i><sub>C</sub> to ~ 2.5 kΩ·μm, and retains an on/off ratio of 10<sup>10</sup> at room temperature. These improvements persist for over 8 months, survive a 150 °C thermal anneal, and remain effective down to 10 K, enabling a cryogenic <i>R</i><sub>C</sub> of ~ 1 kΩ·μm. Density functional theory indicates that chloroform strongly physisorbs to WSe<sub>2</sub>, inducing hole doping with minimal impact on the electronic states between the valence band and conduction band edges. Auger electron spectroscopy and atomic force microscopy suggest that chloroform intercalates at the WSe<sub>2</sub> interface with the gate oxide, contributing to doping stability and mitigating interfacial dielectric disorder, though further studies are needed to conclusively confirm this mechanism. This robust, scalable approach enables high-yield WSe<sub>2</sub> transistors with good <i>p</i>-type performance.</p>

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Low resistance p-type contacts to monolayer WSe2 through chlorinated solvent doping

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月20日

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  • Lauren Hoang,
  • Robert K. A. Bennett,
  • Anh Tuan Hoang,
  • Tara Peña,
  • Zhepeng Zhang,
  • Marisa Hocking,
  • Ashley P. Saunders,
  • Marc Jaikissoon,
  • Fang Liu,
  • Eric Pop,
  • Andrew J. Mannix

摘要

Tungsten diselenide (WSe2) is a promising p-type semiconductor limited by high contact resistance (RC) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe2 to chloroform provides simple and stable p-type doping. In monolayer WSe2 transistors with Pd contacts, chloroform increases the maximum hole current by over 100× (>200 µA/µm), reduces RC to ~ 2.5 kΩ·μm, and retains an on/off ratio of 1010 at room temperature. These improvements persist for over 8 months, survive a 150 °C thermal anneal, and remain effective down to 10 K, enabling a cryogenic RC of ~ 1 kΩ·μm. Density functional theory indicates that chloroform strongly physisorbs to WSe2, inducing hole doping with minimal impact on the electronic states between the valence band and conduction band edges. Auger electron spectroscopy and atomic force microscopy suggest that chloroform intercalates at the WSe2 interface with the gate oxide, contributing to doping stability and mitigating interfacial dielectric disorder, though further studies are needed to conclusively confirm this mechanism. This robust, scalable approach enables high-yield WSe2 transistors with good p-type performance.