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<p>Bilayer rhombohedral-stacked transition-metal dichalcogenides (3R-TMDCs) combining high carrier mobility, good electrostatic control, and exotic switchable polarization are emerging as promising semiconducting channels for beyond-silicon electronics. However, despite great efforts, the growth of wafer-scale bilayer 3R-TMDCs single crystals remains difficult due to challenges in the synergistic control of phase structure and grain orientation. Here we design a hole-doping-assisted strategy to synthesize a series of two-inch bilayer 3R-TMDCs single crystals on c-plane sapphire. The introduction of hole dopants (e.g. Hf, V, Nb, Ta) not only increases the interlayer coupling to break the formation energy degeneracy of bilayer 3R-stacked and hexagonal-stacked TMDCs, but also promotes the parallel steps formation on sapphire surfaces to induce the unidirectionally aligned bilayer grain nucleation. The fabricated ferroelectric semiconductor field-effect transistors based on bilayer Hf-MoS<sub>2</sub> demonstrate high endurance (more than 10<sup>5</sup> cycles) and long retention time (exceeding one year) due to the restriction of interlayer charge defect migration/aggregation caused by sliding ferroelectricity. This work proposes a promising strategy for synthesizing wafer-scale ferroelectric semiconductor single crystals, which could promote the further exploration of logic-in-memory chips.</p>

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Hole-doping-assisted epitaxial growth of wafer-scale rhombohedral-stacked bilayer transition-metal dichalcogenides single crystals

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年11月6日

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  • Hang Sun,
  • Zhu Du,
  • Yanan Peng,
  • Xiaohui Li,
  • Qiang Wan,
  • Ling Huang,
  • Luying Song,
  • Ziyi Han,
  • Ruihan Xu,
  • Yinuo Li,
  • Yuhang Li,
  • Yulin Jiang,
  • Xiaoxu Zhao,
  • Nan Xu,
  • Lei Liao,
  • Congxin Xia,
  • Jianping Shi,
  • Jun He

摘要

Bilayer rhombohedral-stacked transition-metal dichalcogenides (3R-TMDCs) combining high carrier mobility, good electrostatic control, and exotic switchable polarization are emerging as promising semiconducting channels for beyond-silicon electronics. However, despite great efforts, the growth of wafer-scale bilayer 3R-TMDCs single crystals remains difficult due to challenges in the synergistic control of phase structure and grain orientation. Here we design a hole-doping-assisted strategy to synthesize a series of two-inch bilayer 3R-TMDCs single crystals on c-plane sapphire. The introduction of hole dopants (e.g. Hf, V, Nb, Ta) not only increases the interlayer coupling to break the formation energy degeneracy of bilayer 3R-stacked and hexagonal-stacked TMDCs, but also promotes the parallel steps formation on sapphire surfaces to induce the unidirectionally aligned bilayer grain nucleation. The fabricated ferroelectric semiconductor field-effect transistors based on bilayer Hf-MoS2 demonstrate high endurance (more than 105 cycles) and long retention time (exceeding one year) due to the restriction of interlayer charge defect migration/aggregation caused by sliding ferroelectricity. This work proposes a promising strategy for synthesizing wafer-scale ferroelectric semiconductor single crystals, which could promote the further exploration of logic-in-memory chips.