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<p>Van der Waals materials exhibit a variety of states that can be switched with low power at low temperatures, offering a viable cryogenic ‘flash memory’ required for the classical control electronics for solid-state quantum information processing. In 1<i>T</i>-TaS<sub>2</sub>, a non-volatile metallic ‘hidden’ state can be induced from an insulating equilibrium charge-density wave ground state using either optical or electrical pulses. Given that conventional memristors form localized, filamentary channels which support the current, a key question for design concerns the geometry of the conduction region in highly energy-efficient 1<i>T</i>-TaS<sub>2</sub> devices. Here, we report <i>in operando</i> micro-beam X-ray diffraction, fluorescence, and concurrent transport measurements, allowing us to spatially image the non-thermal hidden state induced by electrical switching of 1<i>T</i>-TaS<sub>2</sub>. The results reveal a long-range ordered switching region that extends well below the electrodes, implying that the self-organized, collective growth of the hidden phase is driven by charge rearrangement and concomitant lattice strain. Our combination of techniques showcases the potential of non-destructive, three-dimensional X-ray imaging to study bulk switching in microscopic detail, exemplified here by electrical control of the&#xa0;charge-density wave state of a van der Waals material.</p>

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Imaging of electrically controlled van der Waals layer stacking in 1T-TaS2

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年11月21日

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  • Corinna Burri,
  • Nelson Hua,
  • Dario Ferreira Sanchez,
  • Wenxiang Hu,
  • Henry G. Bell,
  • Rok Venturini,
  • Shih-Wen Huang,
  • Aidan G. McConnell,
  • Faris Dizdarević,
  • Anže Mraz,
  • Damjan Svetin,
  • Benjamin Lipovšek,
  • Marko Topič,
  • Dimitrios Kazazis,
  • Gabriel Aeppli,
  • Daniel Grolimund,
  • Yasin Ekinci,
  • Dragan Mihailović,
  • Simon Gerber

摘要

Van der Waals materials exhibit a variety of states that can be switched with low power at low temperatures, offering a viable cryogenic ‘flash memory’ required for the classical control electronics for solid-state quantum information processing. In 1T-TaS2, a non-volatile metallic ‘hidden’ state can be induced from an insulating equilibrium charge-density wave ground state using either optical or electrical pulses. Given that conventional memristors form localized, filamentary channels which support the current, a key question for design concerns the geometry of the conduction region in highly energy-efficient 1T-TaS2 devices. Here, we report in operando micro-beam X-ray diffraction, fluorescence, and concurrent transport measurements, allowing us to spatially image the non-thermal hidden state induced by electrical switching of 1T-TaS2. The results reveal a long-range ordered switching region that extends well below the electrodes, implying that the self-organized, collective growth of the hidden phase is driven by charge rearrangement and concomitant lattice strain. Our combination of techniques showcases the potential of non-destructive, three-dimensional X-ray imaging to study bulk switching in microscopic detail, exemplified here by electrical control of the charge-density wave state of a van der Waals material.