Measuring Hall voltage and Hall resistance in an atom-based quantum simulator
摘要
In the Hall effect, a voltage drop develops perpendicularly to the current flow in the presence of a magnetic field, leading to a transverse Hall resistance. Recent developments with quantum simulators have unveiled strongly correlated and universal manifestations of the Hall effect. However, a direct measurement of the Hall voltage and of the Hall resistance in a non-electronic system of strongly interacting fermions was not achieved to date. Here, we demonstrate a technique for measuring the Hall voltage in a neutral-atom-based quantum simulator. From that we provide the first direct measurement of the Hall resistance in a cold-atom analogue of a solid-state Hall bar and study its dependence on the carrier density, along with theoretical analyses. Our work closes a major gap between analogue quantum simulations and measurements performed in solid-state systems, providing a key tool for the exploration of the Hall effect in highly tunable and strongly correlated systems.