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<p>Creating 1D or 2D extended defects in thin films that propagate throughout the film thickness enables engineering nanoscale materials with anisotropic properties governed by these defects. Performing defect engineering of thin films with location specificity facilitates new nanoscale device architectures that harness the unique properties of these anisotropic extended defects. Here we demonstrate that, by combining Ga focused ion-beam (FIB) exposure and subsequent heat treatment, it is possible to pattern nanoscale structural perturbations on the substrate surface that promote nucleation and propagation of extended defects in thin films epitaxially grown on these substrates. Using SrTiO<sub>3</sub> as a substrate for growing perovskite BaSnO<sub>3</sub> and SrSnO<sub>3</sub> thin films, we demonstrate engineering ultra-high densities of threading 1D dislocations and 2D Ruddlesden-Popper faults with nanometer-level location specificity limited only by the resolution of the patterning Ga ion-beam of the FIB. Given the versatility of this method, it can be applied to different substrates and films, serving as a flexible means of defect-driven material engineering.</p>

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Defect engineering in BaSnO3 and SrSnO3 thin films through nanoscale substrate patterning

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年10月28日

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  • Supriya Ghosh,
  • Fengdeng Liu,
  • Jay Shah,
  • Silu Guo,
  • Mayank Tanwar,
  • Donghwan Kim,
  • Sreejith Nair,
  • Matthew Neurock,
  • Turan Birol,
  • Bharat Jalan,
  • K. Andre Mkhoyan

摘要

Creating 1D or 2D extended defects in thin films that propagate throughout the film thickness enables engineering nanoscale materials with anisotropic properties governed by these defects. Performing defect engineering of thin films with location specificity facilitates new nanoscale device architectures that harness the unique properties of these anisotropic extended defects. Here we demonstrate that, by combining Ga focused ion-beam (FIB) exposure and subsequent heat treatment, it is possible to pattern nanoscale structural perturbations on the substrate surface that promote nucleation and propagation of extended defects in thin films epitaxially grown on these substrates. Using SrTiO3 as a substrate for growing perovskite BaSnO3 and SrSnO3 thin films, we demonstrate engineering ultra-high densities of threading 1D dislocations and 2D Ruddlesden-Popper faults with nanometer-level location specificity limited only by the resolution of the patterning Ga ion-beam of the FIB. Given the versatility of this method, it can be applied to different substrates and films, serving as a flexible means of defect-driven material engineering.