Scholarlink

<p>High aspect-ratio 2D materials are promising for solution-processed electronics, yet the factors controlling exfoliation remain unclear and relatively few solution-processed networks have been electrically characterized. Here we combine theory and experiment to show that electrochemical exfoliation of layered crystals with sufficient stiffness-anisotropy (in-plane/out-of-plane Young’s modulus ratio &gt;1.7) yields high aspect-ratio nanosheets with intrinsic mobilities <i>μ</i><sub>NS</sub> = 20–75 cm²V⁻¹s⁻¹ across transition metal dichalcogenides and related alloys. Impedance spectroscopy indicates that solution-deposited networks can achieve junction-to-nanosheet resistance ratios (R<sub>J</sub>/R<sub>NS</sub>) as low as ~3, supporting theoretical predictions that <i>μ</i><sub>NS</sub>/<i>μ</i><sub>Net</sub> = R<sub>J</sub>/R<sub>NS</sub> + 1 and suggesting that further reductions in R<sub>J</sub> will increase μ<sub>Net</sub> toward the nanosheet limit (<i>μ</i><sub>NS</sub>). These networks display n-type, p-type, and ambipolar behaviour, with on/off ratios up to 10⁵ and mobilities <i>μ</i><sub>Net</sub> = 13 cm²V⁻¹s⁻¹. Here, we show that such high-performing 2D materials enable functional solution-processed circuits, including inverters, buffers, a 4-bit digital-to-analog converter, and a circuit capable of encoding and decoding 7-bit ASCII messages.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Electronic properties and circuit applications of networks of electrochemically exfoliated 2D nanosheets

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年10月10日

查看全文
  • Tian Carey,
  • Kevin Synnatschke,
  • Goutam Ghosh,
  • Luca Anzi,
  • Eoin Caffrey,
  • Emmet Coleman,
  • Changpeng Lin,
  • Anthony Dawson,
  • Shixin Liu,
  • Rebekah Wells,
  • Mark McCrystall,
  • Jan Plutnar,
  • Iva Plutnarová,
  • Joseph Neilson,
  • Nicola Marzari,
  • Laurens D. A. Siebbeles,
  • Roman Sordan,
  • Zdenek Sofer,
  • Jonathan N. Coleman

摘要

High aspect-ratio 2D materials are promising for solution-processed electronics, yet the factors controlling exfoliation remain unclear and relatively few solution-processed networks have been electrically characterized. Here we combine theory and experiment to show that electrochemical exfoliation of layered crystals with sufficient stiffness-anisotropy (in-plane/out-of-plane Young’s modulus ratio >1.7) yields high aspect-ratio nanosheets with intrinsic mobilities μNS = 20–75 cm²V⁻¹s⁻¹ across transition metal dichalcogenides and related alloys. Impedance spectroscopy indicates that solution-deposited networks can achieve junction-to-nanosheet resistance ratios (RJ/RNS) as low as ~3, supporting theoretical predictions that μNS/μNet = RJ/RNS + 1 and suggesting that further reductions in RJ will increase μNet toward the nanosheet limit (μNS). These networks display n-type, p-type, and ambipolar behaviour, with on/off ratios up to 10⁵ and mobilities μNet = 13 cm²V⁻¹s⁻¹. Here, we show that such high-performing 2D materials enable functional solution-processed circuits, including inverters, buffers, a 4-bit digital-to-analog converter, and a circuit capable of encoding and decoding 7-bit ASCII messages.