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<p>Two-dimensional antiferromagnets that combine the dual advantages of van der Waals (vdW) and antiferromagnetic materials, provide an unprecedented platform to explore emergent spin-related phenomena. However, electrical manipulation of Néel vectors in vdW antiferromagnets —the cornerstone of antiferromagnetic spintronics— remains challenging. Here, we report layer-dependent electrical switching of the Néel vector in an A-type vdW antiferromagnet (Fe, Co)<sub>3</sub>GaTe<sub>2</sub> (FCGT) with perpendicular magnetic anisotropy. The Néel vector of FCGT with odd-number vdW layers can be 180° reversed via spin-orbit torques. Furthermore, we achieve field-free switching in an all-vdW, all-antiferromagnet heterostructure of FCGT/CrSBr in which the noncollinear interfacial spin texture breaks the mirror symmetry. Our results establish layer-controlled spin symmetries and interfacial spin engineering as universal paradigms for manipulating antiferromagnetic order, paving the way for realising reliable and efficient vdW antiferromagnetic devices.</p>

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Layer-dependent spin-orbit torque switching of Néel vector in a van der Waals antiferromagnet

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月7日

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  • Haoran Guo,
  • Zhongchong Lin,
  • Jinhao Lu,
  • Chao Yun,
  • Guanghui Han,
  • Shoutong Sun,
  • Yu Wu,
  • Wenyun Yang,
  • Dongdong Xiao,
  • Zhifeng Zhu,
  • Licong Peng,
  • Yu Ye,
  • Yanglong Hou,
  • Jinbo Yang,
  • Zhaochu Luo

摘要

Two-dimensional antiferromagnets that combine the dual advantages of van der Waals (vdW) and antiferromagnetic materials, provide an unprecedented platform to explore emergent spin-related phenomena. However, electrical manipulation of Néel vectors in vdW antiferromagnets —the cornerstone of antiferromagnetic spintronics— remains challenging. Here, we report layer-dependent electrical switching of the Néel vector in an A-type vdW antiferromagnet (Fe, Co)3GaTe2 (FCGT) with perpendicular magnetic anisotropy. The Néel vector of FCGT with odd-number vdW layers can be 180° reversed via spin-orbit torques. Furthermore, we achieve field-free switching in an all-vdW, all-antiferromagnet heterostructure of FCGT/CrSBr in which the noncollinear interfacial spin texture breaks the mirror symmetry. Our results establish layer-controlled spin symmetries and interfacial spin engineering as universal paradigms for manipulating antiferromagnetic order, paving the way for realising reliable and efficient vdW antiferromagnetic devices.