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<p>Monolayer amorphous carbon (a-C), an atom-thin two-dimensional (2D) carbon amorphous material, has attracted significant attention due to its structural and transport properties. Here, we report a chemical vapor deposition (CVD) approach for directly synthesizing monolayer a-C films on insulating substrates, achieving high control over their size, thickness, and fabrication. The synthesized films exhibit a complete coverage over a 2-inch wafer, with high uniformity. Our theoretical analysis reveals the critical role of tellurium in promoting the growth of monolayer a-C on the substrate. Moreover, quantum tunneling measurements at liquid helium temperature were conducted on the a-C films, confirming the samples’ homogeneity and their insulating behavior. This work provides a promising strategy for direct synthesis of atom-thin insulating amorphous materials and deepens our understanding of quantum phenomena and electronic properties in low-dimensional disordered materials.</p>

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Tellurium-assisted growth of large-scale atom-thin insulating amorphous carbon on insulating substrates

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年10月3日

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  • Ya Deng,
  • Zihao Wang,
  • Zhili Hu,
  • Ang Li,
  • Xin Zhou,
  • Zhaolong Chen,
  • Xingli Wang,
  • Jiawei Liu,
  • Kongyang Yi,
  • Dundong Yuan,
  • Xiaowei Wang,
  • Peikun Zhang,
  • Chao Zhu,
  • Xiaoxu Zhao,
  • Wei Ma,
  • Yao Wu,
  • Ruihuan Duan,
  • Qundong Fu,
  • Jiefu Yang,
  • Xiuxian Zhou,
  • Mengyao Cao,
  • Chao Zhu,
  • Beng Kang Tay,
  • Jian Zhang,
  • Mickael Lucien Perrin,
  • Wu Zhou,
  • Zhuhua Zhang,
  • Kostya S. Novoselov,
  • Zheng Liu

摘要

Monolayer amorphous carbon (a-C), an atom-thin two-dimensional (2D) carbon amorphous material, has attracted significant attention due to its structural and transport properties. Here, we report a chemical vapor deposition (CVD) approach for directly synthesizing monolayer a-C films on insulating substrates, achieving high control over their size, thickness, and fabrication. The synthesized films exhibit a complete coverage over a 2-inch wafer, with high uniformity. Our theoretical analysis reveals the critical role of tellurium in promoting the growth of monolayer a-C on the substrate. Moreover, quantum tunneling measurements at liquid helium temperature were conducted on the a-C films, confirming the samples’ homogeneity and their insulating behavior. This work provides a promising strategy for direct synthesis of atom-thin insulating amorphous materials and deepens our understanding of quantum phenomena and electronic properties in low-dimensional disordered materials.