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<p>Perovskite quantum dot light-emitting diodes have rapidly achieved high external quantum efficiencies of over 25%; however, hindered by limited operating stability originating from surface defects or ion migration in quantum dots. Here, we design a lattice-matched anchoring molecule, tris(4-methoxyphenyl)phosphine oxide (TMeOPPO-<i>p</i>), to anchor the multi-site defects and stabilise the lattice. The target quantum dots exhibit high exciton recombination features with near-unity photoluminescence quantum yields (97%), and the as-fabricated quantum dot light-emitting diodes present a maximum external quantum efficiency of up to 27% at 693 nm, a low efficiency roll-off (over 20% at a current density of 100 mA cm<sup>−2</sup> for the typical device) and an operating half-life of over 23,000 h. Besides, the air-processed devices maintain a maximum external quantum efficiency of over 26% with good storage stability. We expect this work to exert a profound influence on rational and on-demand molecule design for perovskite QDs, indicating great promise in optoelectronic applications.</p>

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Lattice-matched molecular-anchor design for high-performance perovskite quantum dot light-emitting diodes

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月2日

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  • Jiawei Chen,
  • Xiangyu Liu,
  • Bo Cai,
  • Yuanzhuang Cheng,
  • Hao Wen,
  • Danlei Zhu,
  • Yaonan Xiong,
  • Linjie Dai,
  • Xinghua Yan,
  • Baixu Xiang,
  • Xiyu Luo,
  • Wenjing Feng,
  • Jiuyao Du,
  • Shuyue Dong,
  • Qingsong Shan,
  • Shulin Chen,
  • Haibo Zeng,
  • Qihua Xiong,
  • Lian Duan,
  • Dongxin Ma

摘要

Perovskite quantum dot light-emitting diodes have rapidly achieved high external quantum efficiencies of over 25%; however, hindered by limited operating stability originating from surface defects or ion migration in quantum dots. Here, we design a lattice-matched anchoring molecule, tris(4-methoxyphenyl)phosphine oxide (TMeOPPO-p), to anchor the multi-site defects and stabilise the lattice. The target quantum dots exhibit high exciton recombination features with near-unity photoluminescence quantum yields (97%), and the as-fabricated quantum dot light-emitting diodes present a maximum external quantum efficiency of up to 27% at 693 nm, a low efficiency roll-off (over 20% at a current density of 100 mA cm−2 for the typical device) and an operating half-life of over 23,000 h. Besides, the air-processed devices maintain a maximum external quantum efficiency of over 26% with good storage stability. We expect this work to exert a profound influence on rational and on-demand molecule design for perovskite QDs, indicating great promise in optoelectronic applications.