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<p>The elastic degree of freedom is widely exploited to mediate magnetoelectric coupling between ferromagnetic films and ferroelectric substrates. For epitaxial Fe films grown on clean BaTiO<sub>3</sub> substrates, shear strain can determine the underlying magnetoelastic coupling. Here, we use PhotoEmission Electron Microscopy of ferroic Fe and BaTiO<sub>3</sub> domains, combined with micromagnetic simulations, to directly reveal an inverted interfacial magnetoelastic coupling in the low-dimensional limit. We show that the magnetocrystalline anisotropy competes with the epitaxial shear strain to align the local magnetization of ultrathin Fe films close to the local polarization direction of the ferroelectric BaTiO<sub>3</sub> in-plane domains. Poling the BaTiO<sub>3</sub> substrate creates <i>c</i>-domains with no shear strain contribution with the local magnetization rotated by&#xa0;~45°. Tuning shear strain magnetoelastic contributions suggests new routes for designing magnetoelectric devices.</p>

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Inverted shear-strain magnetoelastic coupling at the Fe/BaTiO3 interface from polarised x-ray imaging

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月26日

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  • Francesco Maccherozzi,
  • Massimo Ghidini,
  • Mary Vickers,
  • Xavier Moya,
  • Stuart A. Cavill,
  • Hebatalla Elnaggar,
  • Anne D. Lamirand,
  • Neil D. Mathur,
  • Sarnjeet S. Dhesi

摘要

The elastic degree of freedom is widely exploited to mediate magnetoelectric coupling between ferromagnetic films and ferroelectric substrates. For epitaxial Fe films grown on clean BaTiO3 substrates, shear strain can determine the underlying magnetoelastic coupling. Here, we use PhotoEmission Electron Microscopy of ferroic Fe and BaTiO3 domains, combined with micromagnetic simulations, to directly reveal an inverted interfacial magnetoelastic coupling in the low-dimensional limit. We show that the magnetocrystalline anisotropy competes with the epitaxial shear strain to align the local magnetization of ultrathin Fe films close to the local polarization direction of the ferroelectric BaTiO3 in-plane domains. Poling the BaTiO3 substrate creates c-domains with no shear strain contribution with the local magnetization rotated by ~45°. Tuning shear strain magnetoelastic contributions suggests new routes for designing magnetoelectric devices.