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<p>2D van der Waals ferroelectrics, particularly <i>α</i>-In<sub>2</sub>Se<sub>3</sub>, have emerged as an attractive building block for next-generation information storage technologies due to their moderate band gap and robust ferroelectricity stabilized by dipole locking. <i>α</i>-In<sub>2</sub>Se<sub>3</sub> can adopt either the distorted zincblende or wurtzite structures; however, the wurtzite phase has yet to be experimentally validated, and its large-scale synthesis poses significant challenges. Here, we report an in-situ transport growth of centimeter-scale wurtzite type <i>α</i>-In<sub>2</sub>Se<sub>3</sub> films directly on SiO<sub>2</sub> substrates using a process combining pulsed laser deposition and chemical vapor deposition. We demonstrate that it is a narrow bandgap ferroelectric semiconductor, featuring a Curie temperature exceeding 620 K, a tunable bandgap (0.8–1.6 eV) modulated by charged domain walls, and a large optical absorption coefficient of 1.3 × 10<sup>6</sup>/cm. Moreover, light absorption promotes the dynamic conductance range, linearity, and symmetry of the synapse devices, leading to a high recognition accuracy of 92.3% in a supervised pattern classification task for neuromorphic computing. Our findings demonstrate a ferroelectric polymorphism of In<sub>2</sub>Se<sub>3</sub>, highlighting its potential in ferroelectric synapses for neuromorphic computing.</p>

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2D ferroelectric narrow-bandgap semiconductor Wurtzite’ type α-In2Se3 and its silicon-compatible growth

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年8月9日

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  • Yuxuan Jiang,
  • Xingkun Ning,
  • Renhui Liu,
  • Kepeng Song,
  • Sajjad Ali,
  • Haoyue Deng,
  • Yizhuo Li,
  • Biaohong Huang,
  • Jianhang Qiu,
  • Xiaofei Zhu,
  • Zhen Fan,
  • Qiankun Li,
  • Chengbing Qin,
  • Fei Xue,
  • Teng Yang,
  • Bing Li,
  • Gang Liu,
  • Weijin Hu,
  • Lain-Jong Li,
  • Zhidong Zhang

摘要

2D van der Waals ferroelectrics, particularly α-In2Se3, have emerged as an attractive building block for next-generation information storage technologies due to their moderate band gap and robust ferroelectricity stabilized by dipole locking. α-In2Se3 can adopt either the distorted zincblende or wurtzite structures; however, the wurtzite phase has yet to be experimentally validated, and its large-scale synthesis poses significant challenges. Here, we report an in-situ transport growth of centimeter-scale wurtzite type α-In2Se3 films directly on SiO2 substrates using a process combining pulsed laser deposition and chemical vapor deposition. We demonstrate that it is a narrow bandgap ferroelectric semiconductor, featuring a Curie temperature exceeding 620 K, a tunable bandgap (0.8–1.6 eV) modulated by charged domain walls, and a large optical absorption coefficient of 1.3 × 106/cm. Moreover, light absorption promotes the dynamic conductance range, linearity, and symmetry of the synapse devices, leading to a high recognition accuracy of 92.3% in a supervised pattern classification task for neuromorphic computing. Our findings demonstrate a ferroelectric polymorphism of In2Se3, highlighting its potential in ferroelectric synapses for neuromorphic computing.