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<p>Optical memristors represent a monumental leap in the fusion of photonics and electronics for neuromorphic computing and artificial intelligence. Here, we reveal the first lead zirconate titanate (PZT) optical memristor, working with a paradigm of functional duality: non-volatile setting and ultrafast volatile modulation via the Pockels effect. Fine-tuning and large modulation depth are achieved with an index change of 4.6 × 10<sup>−3</sup> when setting above a threshold voltage <i>V</i><sub>th</sub> and the switching energy is 12.3 pJ only. The non-volatility is highly stable even with &gt;100,000 cycles. Sub-nanosecond volatile modulation (48 Gbps, 432 fJ/bit) is realized with high efficiency (<i>V</i><sub>π</sub><i>L</i> ~ 0.5 V·cm) via the strong Pockels effect below <i>V</i><sub>th</sub>. Our wafer-scale manufacturing process shows great potential for mass production. The present PZT optical memristors bridge the gap between high-speed photonics and non-volatile memory, offering transformative potential for high-speed and energy-efficient optical interconnects, quantum computing, neural networks, in-memory computing, and brain-like architecture.</p>

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PZT optical memristors

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年7月9日

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  • Chenlei Li,
  • Hongyan Yu,
  • Tao Shu,
  • Yueyang Zhang,
  • Chengfeng Wen,
  • Hengzhen Cao,
  • Jin Xie,
  • Hanwen Li,
  • Zixu Xu,
  • Gong Zhang,
  • Zejie Yu,
  • Huan Li,
  • Liu Liu,
  • Yaocheng Shi,
  • Feng Qiu,
  • Daoxin Dai

摘要

Optical memristors represent a monumental leap in the fusion of photonics and electronics for neuromorphic computing and artificial intelligence. Here, we reveal the first lead zirconate titanate (PZT) optical memristor, working with a paradigm of functional duality: non-volatile setting and ultrafast volatile modulation via the Pockels effect. Fine-tuning and large modulation depth are achieved with an index change of 4.6 × 10−3 when setting above a threshold voltage Vth and the switching energy is 12.3 pJ only. The non-volatility is highly stable even with >100,000 cycles. Sub-nanosecond volatile modulation (48 Gbps, 432 fJ/bit) is realized with high efficiency (VπL ~ 0.5 V·cm) via the strong Pockels effect below Vth. Our wafer-scale manufacturing process shows great potential for mass production. The present PZT optical memristors bridge the gap between high-speed photonics and non-volatile memory, offering transformative potential for high-speed and energy-efficient optical interconnects, quantum computing, neural networks, in-memory computing, and brain-like architecture.