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<p>One preferred lead-free ferroelectric, (K,Na)NbO<sub>3</sub>, offers prominent features of environmentally benign and excellent piezoelectricity, but suffers from poor ferroelectricity. Mn-doping has improved its electrical properties, yet its site occupancy remained unclear. In this study, Mn-atomic-layered antiphase boundaries were created in (K,Na)NbO<sub>3</sub>-based films, revealing Mn occupying the A-site position. These boundaries stabilized ferroelectricity in these (K,Na)NbO<sub>3</sub>-based films with a large twice remnant polarization (~72.5 μC/cm<sup>2</sup>) across a wide frequency range (20 Hz−10 kHz). High-resolution imaging shows densely arranged antiphase boundaries are grown along three crystal axes. These boundaries are Mn-atomic-enriched at a nanoscale width of a single unit cell, equilibrating the interfacial charges and clamp the interfacial strain, resulting in the highly squared hysteresis loops and high Curie temperature of ~400 °C in the films. Our results may provide a paradigm for designing high-performance lead-free ferroelectric films, unleashing their application potential for expelling lead-containing counterparts.</p>

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Mn-atomic-layered antiphase boundary enhanced ferroelectricity in KNN-based lead-free films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年7月1日

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  • Liqiang Xu,
  • Zhengyang Kong,
  • Beibei Zhu,
  • Xu Wang,
  • Kun Han,
  • Pingfan Chen,
  • Chao Li,
  • Wenbin Wu,
  • Fang-Zhou Yao,
  • Ke Wang,
  • Zhen Huang,
  • Feng Chen

摘要

One preferred lead-free ferroelectric, (K,Na)NbO3, offers prominent features of environmentally benign and excellent piezoelectricity, but suffers from poor ferroelectricity. Mn-doping has improved its electrical properties, yet its site occupancy remained unclear. In this study, Mn-atomic-layered antiphase boundaries were created in (K,Na)NbO3-based films, revealing Mn occupying the A-site position. These boundaries stabilized ferroelectricity in these (K,Na)NbO3-based films with a large twice remnant polarization (~72.5 μC/cm2) across a wide frequency range (20 Hz−10 kHz). High-resolution imaging shows densely arranged antiphase boundaries are grown along three crystal axes. These boundaries are Mn-atomic-enriched at a nanoscale width of a single unit cell, equilibrating the interfacial charges and clamp the interfacial strain, resulting in the highly squared hysteresis loops and high Curie temperature of ~400 °C in the films. Our results may provide a paradigm for designing high-performance lead-free ferroelectric films, unleashing their application potential for expelling lead-containing counterparts.