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<p>Narrow-band emitters are essential for solid-state lighting, displays, and single-photon sources. Here we design a family of lead-free Eu(II)-based hybrid perovskitoids with tightly face-shared connected [EuBr<sub>6</sub>]<sup>4–</sup> octahedrons, and the experimental and theoretical analyses verify that the electron-phonon coupling therein is suppressed via symmetrical structural parameters as confirmed by the low Huang–Rhys factor, and thus diminishes the homogeneous broadening of the emission bandwidths. Thus, TEtEuBr<sub>3</sub> (TEt is Tetraethylammoniumwith) with symmetrical octahedrons shows ultra-narrow-band cyan emission (full width at half maximum ~36 nm) characterized by localized 5<i>d</i>-4<i>f</i> transition of Eu(II). The as-fabricated phosphor-converted light-emitting-diodes demonstrate low blue light hazard index and high color-rendering index of 96% in full-spectrum lighting technologies, moreover, they realize ultrahigh color gamut of ~115% Rec. 2020 as four-color display devices. We expect this strategy can be expanded to other narrow-band emitters for state-of-the-art optoelectronic applications.</p>

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Suppressing electron–phonon coupling for narrow-band emitting Eu(II)-based perovskitoids

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年7月1日

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  • Kai Han,
  • Xuesong Wang,
  • Jiance Jin,
  • Shuai Zhang,
  • Liang Li,
  • Yuzhen Wang,
  • Lixin Ning,
  • Zhiguo Xia

摘要

Narrow-band emitters are essential for solid-state lighting, displays, and single-photon sources. Here we design a family of lead-free Eu(II)-based hybrid perovskitoids with tightly face-shared connected [EuBr6]4– octahedrons, and the experimental and theoretical analyses verify that the electron-phonon coupling therein is suppressed via symmetrical structural parameters as confirmed by the low Huang–Rhys factor, and thus diminishes the homogeneous broadening of the emission bandwidths. Thus, TEtEuBr3 (TEt is Tetraethylammoniumwith) with symmetrical octahedrons shows ultra-narrow-band cyan emission (full width at half maximum ~36 nm) characterized by localized 5d-4f transition of Eu(II). The as-fabricated phosphor-converted light-emitting-diodes demonstrate low blue light hazard index and high color-rendering index of 96% in full-spectrum lighting technologies, moreover, they realize ultrahigh color gamut of ~115% Rec. 2020 as four-color display devices. We expect this strategy can be expanded to other narrow-band emitters for state-of-the-art optoelectronic applications.