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<p>Vertical p-i-n junctions are key components for optoelectronics to achieve fast response speed. However, a critical bottleneck lies in the complex fabrication techniques and the performance tradeoff between high responsivity and fast speed, especially under self-powered mode. Here, we illustrate the superiority of 2D materials-based vertical p-i-n photodiodes with maximized optical absorption in intrinsic layer (high responsivity), the efficient photocarrier separation (self-power ability), and the high-field drift velocity (fast speed). By optimizing the photocarrier generation/transfer dynamics via doping and thickness engineering, our device with zero voltage bias achieves high built-in electric field, leading to a high responsivity of 0.388 A W<sup>−1</sup> and an <i>EQE</i> of 90.5% at 532 nm, a short intrinsic response time of sub-10 ps, a fast switching response time of 23 ns, and a high power conversion efficiency of 6.5%. Our work lays the foundation to resolve the responsivity-speed dilemma without the constraint of lattice mismatch.</p>

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Boosting responsivity and speed in 2D material based vertical p-i-n photodiodes with excellent self-powered ability

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年7月1日

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  • Maoxin Tian,
  • Yufan Wang,
  • Tianjiao Zhang,
  • Cheng Zhang,
  • Jialei Miao,
  • Zheng Bian,
  • Xiangwei Su,
  • Zongwen Li,
  • Jian Chai,
  • Anran Wang,
  • Fengqiu Wang,
  • Bin Yu,
  • Yang Xu,
  • Yang Chai,
  • Xiao Wang,
  • Yuda Zhao

摘要

Vertical p-i-n junctions are key components for optoelectronics to achieve fast response speed. However, a critical bottleneck lies in the complex fabrication techniques and the performance tradeoff between high responsivity and fast speed, especially under self-powered mode. Here, we illustrate the superiority of 2D materials-based vertical p-i-n photodiodes with maximized optical absorption in intrinsic layer (high responsivity), the efficient photocarrier separation (self-power ability), and the high-field drift velocity (fast speed). By optimizing the photocarrier generation/transfer dynamics via doping and thickness engineering, our device with zero voltage bias achieves high built-in electric field, leading to a high responsivity of 0.388 A W−1 and an EQE of 90.5% at 532 nm, a short intrinsic response time of sub-10 ps, a fast switching response time of 23 ns, and a high power conversion efficiency of 6.5%. Our work lays the foundation to resolve the responsivity-speed dilemma without the constraint of lattice mismatch.