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<p>Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realising precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV<sup>−</sup>) centres that uses site-controlled ion implantation followed by local femtosecond laser annealing with in-situ spectral monitoring. The ion implantation is performed with sub-50 nm resolution and a dosage that is controlled from hundreds of ions down to single ions per site, limited by Poissonian statistics. Using this approach, we successfully demonstrate site-selective creation and modification of single SnV<sup>−</sup> centres. Our in-situ spectral monitoring opens a window onto materials tuning at the single defect level, and provides new insight into defect structures and dynamics during the annealing process. While demonstrated for SnV<sup>−</sup> centres, this versatile approach can be readily generalised to other implanted colour centres in diamond and wide-bandgap materials.</p>

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Laser activation of single group-IV colour centres in diamond

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年6月2日

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  • Xingrui Cheng,
  • Andreas Thurn,
  • Guangzhao Chen,
  • Gareth S. Jones,
  • James E. Bennett,
  • Maddison Coke,
  • Mason Adshead,
  • Cathryn P. Michaels,
  • Osman Balci,
  • Andrea C. Ferrari,
  • Mete Atatüre,
  • Richard J. Curry,
  • Jason M. Smith,
  • Patrick S. Salter,
  • Dorian A. Gangloff

摘要

Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realising precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV−) centres that uses site-controlled ion implantation followed by local femtosecond laser annealing with in-situ spectral monitoring. The ion implantation is performed with sub-50 nm resolution and a dosage that is controlled from hundreds of ions down to single ions per site, limited by Poissonian statistics. Using this approach, we successfully demonstrate site-selective creation and modification of single SnV− centres. Our in-situ spectral monitoring opens a window onto materials tuning at the single defect level, and provides new insight into defect structures and dynamics during the annealing process. While demonstrated for SnV− centres, this versatile approach can be readily generalised to other implanted colour centres in diamond and wide-bandgap materials.