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<p>Heavy-metal-free quantum dot light-emitting diodes (QLEDs) face commercialization challenges due to low efficiency and poor stability. Spin-coated quantum dot films often create charge leakage areas, limiting device performance. Here, we develop an evaporative-driven self-assembly strategy that enables the preparation of uniform and dense InP-based quantum dot films. During device operation, these films effectively suppress performance degradation caused by charge leakage. QLEDs with uniform and dense InP-based quantum dot films achieve high external quantum efficiency (26.6%) and luminance (1.4 × 10<sup>5 </sup>cd m<sup>−2</sup>), along with considerable stability (extrapolated <i>T</i><sub>50</sub> lifetime of 4026 hours at 1000 cd m<sup>−2</sup>). For a 2 × 3 cm<sup>2</sup> InP-based device, the peak external quantum efficiency reaches 21.1%. By combining high-performance QLEDs with lithography technology, we fabricate miniaturized QLEDs with a minimum pixel size of 3 μm, achieving a resolution as high as 5080 pixels per inch and a peak external quantum efficiency of 22.6%.</p>

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Highly efficient light-emitting diodes via self-assembled InP quantum dots

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年5月7日

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  • Hui Li,
  • Jingyuan Zhang,
  • Wen Wen,
  • Yuyan Zhao,
  • Hanfei Gao,
  • Bingqiang Ji,
  • Yunjun Wang,
  • Lei Jiang,
  • Yuchen Wu

摘要

Heavy-metal-free quantum dot light-emitting diodes (QLEDs) face commercialization challenges due to low efficiency and poor stability. Spin-coated quantum dot films often create charge leakage areas, limiting device performance. Here, we develop an evaporative-driven self-assembly strategy that enables the preparation of uniform and dense InP-based quantum dot films. During device operation, these films effectively suppress performance degradation caused by charge leakage. QLEDs with uniform and dense InP-based quantum dot films achieve high external quantum efficiency (26.6%) and luminance (1.4 × 105 cd m−2), along with considerable stability (extrapolated T50 lifetime of 4026 hours at 1000 cd m−2). For a 2 × 3 cm2 InP-based device, the peak external quantum efficiency reaches 21.1%. By combining high-performance QLEDs with lithography technology, we fabricate miniaturized QLEDs with a minimum pixel size of 3 μm, achieving a resolution as high as 5080 pixels per inch and a peak external quantum efficiency of 22.6%.