Scholarlink

<p>Strong electron-electron interaction can induce Mott insulating state, which is believed to host unusual correlated phenomena such as quantum spin liquid when quantum fluctuation dominates and unconventional superconductivity through doping. Transition metal compounds as correlated materials provide a versatile platform to engineer the Mott insulating state. Previous studies mostly focused on the controlling of the repulsive interaction and bandwidth of the electrons by gating or doping. Here, we performed angle-resolved photoemission spectroscopy (ARPES) on monolayer 1T phase NbSe<sub>2</sub>, TaSe<sub>2</sub>, and TaS<sub>2</sub> and directly observed their band structures with characteristic lower Hubbard bands. By systematically investigating the orbital textures and temperature dependence of the energy gap of the materials in this family, we discovered that hybridization of the chalcogen <i>p</i> states with lower Hubbard band stabilizes the Mott phase via tuning of the bandwidth, as shown by a significant increase of the transition temperature (<i>T</i><sub>C</sub>) at a stronger hybridization strength. Our findings reveal a mechanism for realizing a robust Mott insulating phase and establish monolayer 1T phase transition metal dichalcogenide family as a promising platform for exploring correlated electron problems.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Orbital textures and evolution of correlated insulating state in monolayer 1T phase transition metal dichalcogenides

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年4月22日

查看全文
  • Qiang Gao,
  • Haiyang Chen,
  • Wen-shin Lu,
  • Yang-hao Chan,
  • Zhenhua Chen,
  • Yaobo Huang,
  • Zhengtai Liu,
  • Peng Chen

摘要

Strong electron-electron interaction can induce Mott insulating state, which is believed to host unusual correlated phenomena such as quantum spin liquid when quantum fluctuation dominates and unconventional superconductivity through doping. Transition metal compounds as correlated materials provide a versatile platform to engineer the Mott insulating state. Previous studies mostly focused on the controlling of the repulsive interaction and bandwidth of the electrons by gating or doping. Here, we performed angle-resolved photoemission spectroscopy (ARPES) on monolayer 1T phase NbSe2, TaSe2, and TaS2 and directly observed their band structures with characteristic lower Hubbard bands. By systematically investigating the orbital textures and temperature dependence of the energy gap of the materials in this family, we discovered that hybridization of the chalcogen p states with lower Hubbard band stabilizes the Mott phase via tuning of the bandwidth, as shown by a significant increase of the transition temperature (TC) at a stronger hybridization strength. Our findings reveal a mechanism for realizing a robust Mott insulating phase and establish monolayer 1T phase transition metal dichalcogenide family as a promising platform for exploring correlated electron problems.