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<p>Two-dimensional (2D) semiconductors hold great promise for future electronics, yet the fabrication of clean ohmic electrical contacts remains a key challenge. Traditional lithography and metallization processes often introduce interfacial disorder, and recently developed electrode-transfer-based techniques are difficult to implement without contaminating the interfaces between 2D crystals and metals. Here, we demonstrate a low-temperature chemical vapor deposition (CVD)-based van der Waals (vdW) epitaxy method to grow 2D metal (Cd) electrodes, eliminating lithography, deposition, or transfer processes and enabling the damage-free integration of 2D semiconductors. This thermodynamic integration strategy significantly mitigates the interfacial disorder and metal-induced gap states (MIGS), leading to low contact resistance (<i>R</i><sub>C</sub>) and near-zero barrier ohmic contacts. Cd-MoS<sub>2</sub> field-effect transistors (FETs) exhibit <i>R</i><sub>C</sub> down to 70–100 Ω·μm, on-state current densities up to 942 μA/μm, on/off ratios exceeding 10<sup>8</sup>, and mobilities up to 160 cm<sup>2&#xa0;</sup>V<sup>−1&#xa0;</sup>s<sup>−1</sup>. These results position vdW epitaxially grown 2D metals as a promising contact technology for next-generation electronics beyond silicon.</p>

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2D Cd metal contacts via low-temperature van der Waals epitaxy towards high-performance 2D transistors

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年4月29日

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  • Min Yue,
  • Kenan Zhang,
  • Mei Zhao,
  • Yinan Wang,
  • Dong Li,
  • Jieyuan Liang,
  • Biyuan Zheng,
  • Chao Zou,
  • Yu Ye,
  • Peijian Wang,
  • Lijie Zhang,
  • Shun Wang

摘要

Two-dimensional (2D) semiconductors hold great promise for future electronics, yet the fabrication of clean ohmic electrical contacts remains a key challenge. Traditional lithography and metallization processes often introduce interfacial disorder, and recently developed electrode-transfer-based techniques are difficult to implement without contaminating the interfaces between 2D crystals and metals. Here, we demonstrate a low-temperature chemical vapor deposition (CVD)-based van der Waals (vdW) epitaxy method to grow 2D metal (Cd) electrodes, eliminating lithography, deposition, or transfer processes and enabling the damage-free integration of 2D semiconductors. This thermodynamic integration strategy significantly mitigates the interfacial disorder and metal-induced gap states (MIGS), leading to low contact resistance (RC) and near-zero barrier ohmic contacts. Cd-MoS2 field-effect transistors (FETs) exhibit RC down to 70–100 Ω·μm, on-state current densities up to 942 μA/μm, on/off ratios exceeding 108, and mobilities up to 160 cm2 V−1 s−1. These results position vdW epitaxially grown 2D metals as a promising contact technology for next-generation electronics beyond silicon.