Scholarlink

<p>Polarization engineering has revolutionized the photonic and electronic landscape of III-nitride semiconductors over the past decades. However, recent revelations of giant ferroelectric polarization in wurtzite III-nitrides challenge the long-standing paradigms. Here, we experimentally elucidate the polarization, including its magnitude and orientation, and its relationship to lattice polarity in III-nitrides. Those experimentally determined polarizations exceeding 1 C/m<sup>2</sup> with an upward orientation in metal-polar wurtzite nitride compounds align with recent theoretical predictions. To reconcile these findings, a unified polarization framework is established based on the centrosymmetric layered-hexagonal reference structure. This unified framework redefines the polarization landscape in contemporary GaN heterostructures, quantum structures, and ferroelectric heterostructures. Furthermore, we predict significant tunability and a dramatic increase in sheet carrier concentration in ferroelectric ScAlN/GaN heterostructures, heralding advancements in high-power, high-frequency, and reconfigurable transistors, and non-volatile memories. This work bridges the critical gap in the understanding of polarization in both conventional and ferroelectric wurtzite nitrides, offering fundamental insights and paving the way for next-generation photonic, electronic, and acoustic devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Experimental determination of giant polarization in wurtzite III-nitride semiconductors

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年4月24日

查看全文
  • Haotian Ye,
  • Ping Wang,
  • Rui Wang,
  • Jinlin Wang,
  • Xifan Xu,
  • Ran Feng,
  • Tao Wang,
  • Wen-Yi Tong,
  • Fang Liu,
  • Bowen Sheng,
  • Wenjie Ma,
  • Bingxuan An,
  • Hongjian Li,
  • Zhaoying Chen,
  • Chun-Gang Duan,
  • Weikun Ge,
  • Bo Shen,
  • Xinqiang Wang

摘要

Polarization engineering has revolutionized the photonic and electronic landscape of III-nitride semiconductors over the past decades. However, recent revelations of giant ferroelectric polarization in wurtzite III-nitrides challenge the long-standing paradigms. Here, we experimentally elucidate the polarization, including its magnitude and orientation, and its relationship to lattice polarity in III-nitrides. Those experimentally determined polarizations exceeding 1 C/m2 with an upward orientation in metal-polar wurtzite nitride compounds align with recent theoretical predictions. To reconcile these findings, a unified polarization framework is established based on the centrosymmetric layered-hexagonal reference structure. This unified framework redefines the polarization landscape in contemporary GaN heterostructures, quantum structures, and ferroelectric heterostructures. Furthermore, we predict significant tunability and a dramatic increase in sheet carrier concentration in ferroelectric ScAlN/GaN heterostructures, heralding advancements in high-power, high-frequency, and reconfigurable transistors, and non-volatile memories. This work bridges the critical gap in the understanding of polarization in both conventional and ferroelectric wurtzite nitrides, offering fundamental insights and paving the way for next-generation photonic, electronic, and acoustic devices.