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<p>Negative differential resistance (NDR), a peculiar electrical property in which current decreases with increasing voltage, is highly desirable for multivalued logic gates, memory devices, and oscillators. Recently, 2D quantum-tunneling NDR devices have attracted considerable attention because of the inherent atomically flat and dangling-bond-free surfaces of 2D materials. However, the low current density of 2D NDR devices limits their operating frequency to less than 2 MHz. In this study, graphene/hexagonal boron nitride (h-BN)/graphene resonant tunneling transistors (RTTs) were fabricated using graphene and h-BN barriers with different numbers of atomic layers, showing a mechanism enabling the observation of NDR in high current density devices. A triangular etching approach was proposed to suppress the effects of graphene–metal contact resistance and graphene sheet resistance, enabling pronounced NDR effect even in a 2D tunneling device with a single atomic layer h-BN barrier. A room-temperature peak current density up to 2700 μA/μm<sup>2</sup> and operational frequencies up to 11 GHz were achieved, demonstrating the potential of 2D quantum NDR devices for applications in high-speed electronics.</p>

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Toward high-current-density and high-frequency graphene resonant tunneling transistors

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年5月23日

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  • Zihao Zhang,
  • Baoqing Zhang,
  • Yifei Zhang,
  • Yiming Wang,
  • Patrick Hays,
  • Seth Ariel Tongay,
  • Mingyang Wang,
  • Hecheng Han,
  • Hu Li,
  • Jiawei Zhang,
  • Aimin Song

摘要

Negative differential resistance (NDR), a peculiar electrical property in which current decreases with increasing voltage, is highly desirable for multivalued logic gates, memory devices, and oscillators. Recently, 2D quantum-tunneling NDR devices have attracted considerable attention because of the inherent atomically flat and dangling-bond-free surfaces of 2D materials. However, the low current density of 2D NDR devices limits their operating frequency to less than 2 MHz. In this study, graphene/hexagonal boron nitride (h-BN)/graphene resonant tunneling transistors (RTTs) were fabricated using graphene and h-BN barriers with different numbers of atomic layers, showing a mechanism enabling the observation of NDR in high current density devices. A triangular etching approach was proposed to suppress the effects of graphene–metal contact resistance and graphene sheet resistance, enabling pronounced NDR effect even in a 2D tunneling device with a single atomic layer h-BN barrier. A room-temperature peak current density up to 2700 μA/μm2 and operational frequencies up to 11 GHz were achieved, demonstrating the potential of 2D quantum NDR devices for applications in high-speed electronics.