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<p>Two-dimensional (2D) materials have emerged as one of most promising candidates to meet the demands of beyond-silicon technology. Among 2D semiconductors, Bi<sub>2</sub>O<sub>2</sub>Se (BOSe) stands out as a channel material for advanced electronic applications, due to its high electron mobility and the formation of a native high-k dielectric layer. However, the fabrication of p-type 2D BOSe transistors remains challenging. Here, we report an area-selective doping method at low temperatures (~600 K, compatible with back-end-of-line processes) of pulsed laser deposited BOSe thin films, enabling the modulation of their carrier polarity via the introduction of Zn<sup>2+</sup> substitutional dopants. Taking advantage of this doping strategy, we demonstrate the fabrication of a 2D vertical p-n homojunction with an on/off ratio in photoresponse of ~10<sup>6</sup> and planar transistors based on p-doped BOSe homojunctions. Our results help promoting the application of this material system towards the development of the next-generation electronics.</p>

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Polarity modulation in compositionally tunable Bi2O2Se thin films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年3月24日

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  • Yong-Jyun Wang,
  • Jian-Wei Zhang,
  • Jianchu Chen,
  • Haonan Wang,
  • Shiuan Wu,
  • Chang-Yu Lo,
  • Jhe-Ting Hong,
  • Cheng-Yang Syu,
  • Li-Syuan Hao,
  • I-Sung Chen,
  • Yuan-Chih Chang,
  • Zhenzhong Yang,
  • Rong Huang,
  • Chun-Liang Lin,
  • Po-Wen Chiu,
  • Yu-Lun Chueh,
  • Yi-Cheng Chen,
  • Chao-Hui Yeh,
  • Ying-Hao Chu

摘要

Two-dimensional (2D) materials have emerged as one of most promising candidates to meet the demands of beyond-silicon technology. Among 2D semiconductors, Bi2O2Se (BOSe) stands out as a channel material for advanced electronic applications, due to its high electron mobility and the formation of a native high-k dielectric layer. However, the fabrication of p-type 2D BOSe transistors remains challenging. Here, we report an area-selective doping method at low temperatures (~600 K, compatible with back-end-of-line processes) of pulsed laser deposited BOSe thin films, enabling the modulation of their carrier polarity via the introduction of Zn2+ substitutional dopants. Taking advantage of this doping strategy, we demonstrate the fabrication of a 2D vertical p-n homojunction with an on/off ratio in photoresponse of ~106 and planar transistors based on p-doped BOSe homojunctions. Our results help promoting the application of this material system towards the development of the next-generation electronics.