Scholarlink

<p>Electrochemical random-access memory devices are promising for analog cross-point array-based artificial intelligence accelerators due to their high stability and programmability. However, understanding their switching mechanism is challenging due to complex multilayer structures and the high resistivity of oxide materials. Here, we fabricate multi-terminal Hall-bar devices and conduct alternating current magnetic parallel dipole line Hall measurements to extract transport parameters. Through variable-temperature Hall measurements, we determine the oxygen donor level at approximately 0.1 eV in tungsten oxide and reveal that conductance potentiation even at low temperatures results from increased mobility and carrier density. This behavior is linked to reversible electronic and atomic structure changes, supported by density functional theory calculations. Our findings enhance the understanding of electrochemical random-access memory switching mechanisms and provide insights for improving high-performance, energy-efficient artificial intelligence computation in analog hardware.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Unveiling ECRAM switching mechanisms using variable temperature Hall measurements for accelerated AI computation

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年3月19日

查看全文
  • Hyunjeong Kwak,
  • Junyoung Choi,
  • Seungmin Han,
  • Eun Ho Kim,
  • Chaeyoun Kim,
  • Paul Solomon,
  • Junyong Lee,
  • Doyoon Kim,
  • Byungha Shin,
  • Donghwa Lee,
  • Oki Gunawan,
  • Seyoung Kim

摘要

Electrochemical random-access memory devices are promising for analog cross-point array-based artificial intelligence accelerators due to their high stability and programmability. However, understanding their switching mechanism is challenging due to complex multilayer structures and the high resistivity of oxide materials. Here, we fabricate multi-terminal Hall-bar devices and conduct alternating current magnetic parallel dipole line Hall measurements to extract transport parameters. Through variable-temperature Hall measurements, we determine the oxygen donor level at approximately 0.1 eV in tungsten oxide and reveal that conductance potentiation even at low temperatures results from increased mobility and carrier density. This behavior is linked to reversible electronic and atomic structure changes, supported by density functional theory calculations. Our findings enhance the understanding of electrochemical random-access memory switching mechanisms and provide insights for improving high-performance, energy-efficient artificial intelligence computation in analog hardware.