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<p>The development of <i>p</i>-type WSe<sub>2</sub> transistors has lagged behind <i>n</i>-type MoS<sub>2</sub> because of challenges in growing high-quality, large-area WSe<sub>2</sub> films. This study employs an alkali-assisted CVD (AACVD) method by using KOH to enhance nucleation on sapphire substrates, effectively promoting monolayer growth on c-plane sapphire and enabling controlled bilayer seeding on miscut surfaces with artificial steps. With AACVD, we achieve 2-inch monolayer and centimeter-scale bilayer WSe<sub>2</sub> films with defect densities as low as 1.6 × 10<sup>12 </sup>cm<sup>−2</sup> (monolayer) and 1.8 × 10<sup>12 </sup>cm<sup>−2</sup> (bilayer), comparable to exfoliated WSe<sub>2</sub>. Bilayer WSe<sub>2</sub> transistors exhibit hole/electron mobilities of 119/34 cm²/Vs, while monolayers achieve 105/22 cm²/Vs with suitable metal contacts. Additionally, bilayer WSe<sub>2</sub> demonstrates lower contact resistance for both <i>n</i>-type and <i>p</i>-type transistors, making it highly promising for future high-performance electronic applications.</p>

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Large-scale alkali-assisted growth of monolayer and bilayer WSe2 with a low defect density

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年3月21日

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  • Sui-An Chou,
  • Chen Chang,
  • Bo-Hong Wu,
  • Chih-Piao Chuu,
  • Pai-Chia Kuo,
  • Liang-Hsuan Pan,
  • Kai-Chun Huang,
  • Man-Hong Lai,
  • Yi-Feng Chen,
  • Che-Lun Lee,
  • Hao-Yu Chen,
  • Jessie Shiue,
  • Yu-Ming Chang,
  • Ming-Yang Li,
  • Ya-Ping Chiu,
  • Chun-Wei Chen,
  • Po-Hsun Ho

摘要

The development of p-type WSe2 transistors has lagged behind n-type MoS2 because of challenges in growing high-quality, large-area WSe2 films. This study employs an alkali-assisted CVD (AACVD) method by using KOH to enhance nucleation on sapphire substrates, effectively promoting monolayer growth on c-plane sapphire and enabling controlled bilayer seeding on miscut surfaces with artificial steps. With AACVD, we achieve 2-inch monolayer and centimeter-scale bilayer WSe2 films with defect densities as low as 1.6 × 1012 cm−2 (monolayer) and 1.8 × 1012 cm−2 (bilayer), comparable to exfoliated WSe2. Bilayer WSe2 transistors exhibit hole/electron mobilities of 119/34 cm²/Vs, while monolayers achieve 105/22 cm²/Vs with suitable metal contacts. Additionally, bilayer WSe2 demonstrates lower contact resistance for both n-type and p-type transistors, making it highly promising for future high-performance electronic applications.