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<p>The ever-shrinking electrostatic capacitor, which is capable of storing substantial quantities of electrical charge, has found widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices. Despite the high energy storage densities (133–152 J/cm<sup>3</sup>) and efficiencies (75–90%) that have been realized using relaxor ferroelectric thick films, low-permittivity interfacial layers in the ultrathin films have caused the overall permittivity to be one to two orders of magnitude lower than expected. However, innovative use of complementary metal-oxide-semiconductor-compatible HfO<sub>2</sub>-based materials with high permittivities (~52) could enable integration of these capacitors into few-nanometre-scale devices. This study reports an ultrahigh dielectric permittivity of 921, stored charge density of 349 μC/cm<sup>2</sup>, and energy density of 584 J/cm<sup>3</sup> with nearly 100% efficiency within near-edge plasma-treated Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin-film capacitors when the Hf-based material’s ferroelectricity disappears suddenly after polarization fatigue. The ultrahigh dielectric permittivity originates from a distorted orthorhombic phase with ordered oxygen vacancies that enables high-density integration of extremely scaled logic and memory devices for low-voltage applications.</p>

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Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年3月18日

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  • Wen Di Zhang,
  • Zi Zheng Song,
  • Shu Qi Tang,
  • Jin Chen Wei,
  • Yan Cheng,
  • Bing Li,
  • Shi You Chen,
  • Zi Bin Chen,
  • An Quan Jiang

摘要

The ever-shrinking electrostatic capacitor, which is capable of storing substantial quantities of electrical charge, has found widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices. Despite the high energy storage densities (133–152 J/cm3) and efficiencies (75–90%) that have been realized using relaxor ferroelectric thick films, low-permittivity interfacial layers in the ultrathin films have caused the overall permittivity to be one to two orders of magnitude lower than expected. However, innovative use of complementary metal-oxide-semiconductor-compatible HfO2-based materials with high permittivities (~52) could enable integration of these capacitors into few-nanometre-scale devices. This study reports an ultrahigh dielectric permittivity of 921, stored charge density of 349 μC/cm2, and energy density of 584 J/cm3 with nearly 100% efficiency within near-edge plasma-treated Hf0.5Zr0.5O2 thin-film capacitors when the Hf-based material’s ferroelectricity disappears suddenly after polarization fatigue. The ultrahigh dielectric permittivity originates from a distorted orthorhombic phase with ordered oxygen vacancies that enables high-density integration of extremely scaled logic and memory devices for low-voltage applications.