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<p>The experimental realization of single-crystalline high-κ dielectrics beyond two-dimensional (2D) layered materials is highly desirable for nanoscale field-effect transistors (FETs). However, the scalable synthesis of 2D nonlayered high-κ insulators is currently limited by uncontrolled isotropic three-dimensional growth, hampering the achievement of simultaneous high dielectric constants and low trap densities for small film thicknesses. Herein, we show a 2D edge-seeded heteroepitaxial strategy to synthesize ultrathin nonlayered 2D CaNb<sub>2</sub>O<sub>6</sub> nanosheets by chemical vapor deposition, exhibiting high-crystalline quality, thickness-independent dielectric constant (~ 16) and breakdown field strength up to ~ 12 MV cm<sup>−1</sup>. The MoS<sub>2</sub>/CaNb<sub>2</sub>O<sub>6</sub> FETs exhibit an on/off ratio of over ~ 10<sup>7</sup>, a subthreshold swing down to 61 mV/dec and a negligible hysteresis. This work suggests a universal 2D edge-seeded heteroepitaxy and slow kinetic strategy for the scalable growth of 2D nonlayered dielectric and demonstrates 2D CaNb<sub>2</sub>O<sub>6</sub> nanosheets as promising dielectrics for facilitating 2D electronic applications.</p>

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2D edge-seeded heteroepitaxy of ultrathin high-κ dielectric CaNb2O6 for 2D field-effect transistors

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年3月16日

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  • Xiulian Fan,
  • Jiali Yi,
  • Bin Deng,
  • Cong Zhou,
  • Zejuan Zhang,
  • Jia Yu,
  • Weihan Li,
  • Cheng Li,
  • Guangcheng Wu,
  • Xilong Zhou,
  • Tulai Sun,
  • Yihan Zhu,
  • Jian Zhou,
  • Juan Xia,
  • Zenghui Wang,
  • Keji Lai,
  • Zheng Peng,
  • Dong Li,
  • Anlian Pan,
  • Yu Zhou

摘要

The experimental realization of single-crystalline high-κ dielectrics beyond two-dimensional (2D) layered materials is highly desirable for nanoscale field-effect transistors (FETs). However, the scalable synthesis of 2D nonlayered high-κ insulators is currently limited by uncontrolled isotropic three-dimensional growth, hampering the achievement of simultaneous high dielectric constants and low trap densities for small film thicknesses. Herein, we show a 2D edge-seeded heteroepitaxial strategy to synthesize ultrathin nonlayered 2D CaNb2O6 nanosheets by chemical vapor deposition, exhibiting high-crystalline quality, thickness-independent dielectric constant (~ 16) and breakdown field strength up to ~ 12 MV cm−1. The MoS2/CaNb2O6 FETs exhibit an on/off ratio of over ~ 107, a subthreshold swing down to 61 mV/dec and a negligible hysteresis. This work suggests a universal 2D edge-seeded heteroepitaxy and slow kinetic strategy for the scalable growth of 2D nonlayered dielectric and demonstrates 2D CaNb2O6 nanosheets as promising dielectrics for facilitating 2D electronic applications.