<p>Electromechanical coupling permits energy conversion between electrical and elastic forms, with wide applications<sup><CitationRef CitationID="CR1">1</CitationRef>,<CitationRef CitationID="CR2">2</CitationRef></sup>. This conversion is usually observed in dielectric materials as piezoelectricity and electrostriction<sup><CitationRef AdditionalCitationIDS="CR4 CR5 CR6" CitationID="CR3">3</CitationRef>–<CitationRef CitationID="CR7">7</CitationRef></sup>. Electromechanical coupling response has also been observed in semiconductors<sup><CitationRef CitationID="CR8">8</CitationRef></sup>, however, the mechanism in semiconductors with a small bandgap remains contentious. Here we present a breakthrough discovery of a giant electromechanical strain triggered by the electric current in thin antipolar Ag<sub>2</sub>Se semiconductor. This phenomenon is made possible by the alteration of dipoles at a low current density (step I), followed by a phase transition under a moderate current density (step II), leading to a local strain of 6.7% measured by in-situ transmission electron microscopy. Our finding demonstrates that electric current has both thermal and athermal effect (<i>e.g</i>. alteration of dipoles and interaction of dipole vortices with the electric current). This strain allows for the concurrent control of electroelastic deformation and electric conductivity.</p>

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Current induced electromechanical strain in thin antipolar Ag2Se semiconductor

  • Hao Luo,
  • Qi Liang,
  • Anan Guo,
  • Yimeng Yu,
  • Haoyang Peng,
  • Xiaoyi Gao,
  • Yihao Hu,
  • Xianli Su,
  • Ctirad Uher,
  • Yu Zheng,
  • Dongwang Yang,
  • Xiaolin Wang,
  • Qingjie Zhang,
  • Xinfeng Tang,
  • Shi Liu,
  • Gustaaf Van Tendeloo,
  • Shujun Zhang,
  • Jinsong Wu

摘要

Electromechanical coupling permits energy conversion between electrical and elastic forms, with wide applications1,2. This conversion is usually observed in dielectric materials as piezoelectricity and electrostriction37. Electromechanical coupling response has also been observed in semiconductors8, however, the mechanism in semiconductors with a small bandgap remains contentious. Here we present a breakthrough discovery of a giant electromechanical strain triggered by the electric current in thin antipolar Ag2Se semiconductor. This phenomenon is made possible by the alteration of dipoles at a low current density (step I), followed by a phase transition under a moderate current density (step II), leading to a local strain of 6.7% measured by in-situ transmission electron microscopy. Our finding demonstrates that electric current has both thermal and athermal effect (e.g. alteration of dipoles and interaction of dipole vortices with the electric current). This strain allows for the concurrent control of electroelastic deformation and electric conductivity.