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<p>The photoinduced semiconductor-to-metal transition (PSMT) unveils crucial photodynamic mechanisms and holds great promise for information storage, sensing, optoelectronics, optical switches, etc. All previously reported PSMTs have occurred between two structural phases of the same material, lacking real-space evidence at the atomic or molecular level. Herein, we report atomic-scale observations of a photoinduced ‘face changing’: light irradiation transforms a semiconductor copper selenide (Cu<sub>2</sub>Se) surface layer on Cu(111) into a well-defined metallic Cu layer. Se atoms sink to form a new Cu<sub>2</sub>Se sublayer, while the original subsurface Cu atoms are lifted to the top layer. The Cu<sub>2</sub>Se-to-Cu transition barrier is significantly lower in the excited state compared to the ground state. Thermoactivation enables the reverse transition. The photoinduced Cu<sub>2</sub>Se-to-Cu and thermoactivated Cu-to-Cu<sub>2</sub>Se transitions are highly reversible. This work, which demonstrates PSMT between two distinct materials and photo-driven interlayer atom migration, unlocks an unconventional and intriguing route for PSMT and surface modification technologies.</p>

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Semiconductor-to-metal surface reconstruction in copper selenide/copper heterostructures steered by photoinduced interlayer atom migration

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年2月13日

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  • Meiling Chen,
  • Wenhao Liu,
  • Pengcheng Ding,
  • Fengwu Guo,
  • Zhuo Li,
  • Yanghan Chen,
  • Wei Yi,
  • Ye Sun,
  • Jianchen Lu,
  • Lev Kantorovich,
  • Miao Yu

摘要

The photoinduced semiconductor-to-metal transition (PSMT) unveils crucial photodynamic mechanisms and holds great promise for information storage, sensing, optoelectronics, optical switches, etc. All previously reported PSMTs have occurred between two structural phases of the same material, lacking real-space evidence at the atomic or molecular level. Herein, we report atomic-scale observations of a photoinduced ‘face changing’: light irradiation transforms a semiconductor copper selenide (Cu2Se) surface layer on Cu(111) into a well-defined metallic Cu layer. Se atoms sink to form a new Cu2Se sublayer, while the original subsurface Cu atoms are lifted to the top layer. The Cu2Se-to-Cu transition barrier is significantly lower in the excited state compared to the ground state. Thermoactivation enables the reverse transition. The photoinduced Cu2Se-to-Cu and thermoactivated Cu-to-Cu2Se transitions are highly reversible. This work, which demonstrates PSMT between two distinct materials and photo-driven interlayer atom migration, unlocks an unconventional and intriguing route for PSMT and surface modification technologies.