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<p>Two-dimensional (2D) materials hold transformative potential for next-generation electronics. The integration of high dielectric constant (<i>k</i>) dielectrics onto 2D semiconductors, while maintaining their pristine properties by low-defect-density interfaces, has proven challenging and become one performance bottleneck of their practical implementation. Here, we report a wet-chemistry-based method to fabricate amorphous, transferable high-<i>k</i> (42.9) copper calcium titanate (CCTO) thin films as high-quality, dual-function dielectrics for 2D electronic devices. The chelation-based Pechini approach guarantees uniformity in this perovskite-type complex oxide, while the transferrable feature allows its harmless integration to 2D semiconductors interfacing with a nanogap. The CCTO-gated MoS<sub>2</sub> devices exhibit a subthreshold swing down to 67 mV dec<sup>−1</sup> and an ultra-small hysteresis of ~ 1 mV/(MV cm<sup>−1</sup>). Moreover, leveraging its visible-light active characteristics, we implement an electrically-manipulated, optically-activated nonvolatile floating gate in CCTO, enabling the reconfigurable execution of 9 basic Boolean logic in-sensor operations within a single field-effect device architecture. This advancement paves the way for the development of multifunctional, low-power 2D electronic systems by incorporating multifunctional conventional complex oxides.</p>

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Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年2月10日

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  • Zhixin Yao,
  • Huifeng Tian,
  • U. Sasaki,
  • Huacong Sun,
  • Jingyi Hu,
  • Guodong Xue,
  • Ye Seul Jung,
  • Ruijie Li,
  • Zhenjiang Li,
  • PeiChi Liao,
  • Yihan Wang,
  • Lina Yang Zhang,
  • Ge Yin,
  • Xuanyu Zhang,
  • Yijie Luo,
  • Wenxi Li,
  • Yong Soo Cho,
  • Peizhi Liu,
  • Kaihui Liu,
  • Yanfeng Zhang,
  • Lifen Wang,
  • Junjie Guo,
  • Lei Liu

摘要

Two-dimensional (2D) materials hold transformative potential for next-generation electronics. The integration of high dielectric constant (k) dielectrics onto 2D semiconductors, while maintaining their pristine properties by low-defect-density interfaces, has proven challenging and become one performance bottleneck of their practical implementation. Here, we report a wet-chemistry-based method to fabricate amorphous, transferable high-k (42.9) copper calcium titanate (CCTO) thin films as high-quality, dual-function dielectrics for 2D electronic devices. The chelation-based Pechini approach guarantees uniformity in this perovskite-type complex oxide, while the transferrable feature allows its harmless integration to 2D semiconductors interfacing with a nanogap. The CCTO-gated MoS2 devices exhibit a subthreshold swing down to 67 mV dec−1 and an ultra-small hysteresis of ~ 1 mV/(MV cm−1). Moreover, leveraging its visible-light active characteristics, we implement an electrically-manipulated, optically-activated nonvolatile floating gate in CCTO, enabling the reconfigurable execution of 9 basic Boolean logic in-sensor operations within a single field-effect device architecture. This advancement paves the way for the development of multifunctional, low-power 2D electronic systems by incorporating multifunctional conventional complex oxides.