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<p>Spin-orbit torque (SOT) provides a promising mechanism for electrically encoding information in magnetic states. Unlike existing schemes, where the SOT is passively determined by the material and device structures, an active manipulation of the intrinsic SOT polarity would allow for flexibly programmable SOT devices. Achieving this requires electrical control of the current-induced spin polarization of the spin source. Here we demonstrate a proof-of-concept current-programmed SOT device. Using a noncollinear-antiferromagnetic/nonmagnetic/ferromagnetic Mn<sub>3</sub>Sn/Mo/CoFeB heterostructure at zero magnetic field, we show current-induced switching in the CoFeB layer due to the spin current polarized by the magnetic structure of the Mn<sub>3</sub>Sn; by properly tuning the driving current, the spin current from the CoFeB further reverses the magnetic orientation of the Mn<sub>3</sub>Sn, which determines the polarity of the subsequent switching of the CoFeB. This scheme of mutual switching can be achieved in a spin-valve-like simple protocol because each magnetic layer serves as a reversible spin source and target magnetic electrode. It yields intriguing proof-of-concept functionalities for unconventional logic and neuromorphic computing.</p>

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Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructure

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年2月5日

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  • Ju-Young Yoon,
  • Yutaro Takeuchi,
  • Ryota Takechi,
  • Jiahao Han,
  • Tomohiro Uchimura,
  • Yuta Yamane,
  • Shun Kanai,
  • Jun’ichi Ieda,
  • Hideo Ohno,
  • Shunsuke Fukami

摘要

Spin-orbit torque (SOT) provides a promising mechanism for electrically encoding information in magnetic states. Unlike existing schemes, where the SOT is passively determined by the material and device structures, an active manipulation of the intrinsic SOT polarity would allow for flexibly programmable SOT devices. Achieving this requires electrical control of the current-induced spin polarization of the spin source. Here we demonstrate a proof-of-concept current-programmed SOT device. Using a noncollinear-antiferromagnetic/nonmagnetic/ferromagnetic Mn3Sn/Mo/CoFeB heterostructure at zero magnetic field, we show current-induced switching in the CoFeB layer due to the spin current polarized by the magnetic structure of the Mn3Sn; by properly tuning the driving current, the spin current from the CoFeB further reverses the magnetic orientation of the Mn3Sn, which determines the polarity of the subsequent switching of the CoFeB. This scheme of mutual switching can be achieved in a spin-valve-like simple protocol because each magnetic layer serves as a reversible spin source and target magnetic electrode. It yields intriguing proof-of-concept functionalities for unconventional logic and neuromorphic computing.