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<p>The ferroelectricity in stacked van der Waals multilayers through interlayer sliding holds great promise for ultrathin high-density memory devices, yet mostly subject to weak polarization and cryogenic operating condition. Here, we demonstrate robust room-temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride layers with a rhombohedral-like stacking (<i>i.e</i>., ABC-like stacking). The system exhibits an unconventional negative capacitance and record high electric polarization of 1.76 μC/cm<sup>2</sup> among reported sliding ferroelectrics to date. The ferroelectricity also exists in similarly sandwiched bilayer and trilayer graphene, yet the polarization is slightly decreased with odd-even parity. Ab initio calculations suggest that the ferroelectricity is associated with a unique switchable co-sliding motion between graphene and adjacent boron nitride layer, in contrast to existing conventional vdW sliding ferroelectrics. As such, the ferroelectricity can sustain up to 325 K and remains intact after 50000 switching cycles in ~300000 s duration at 300 K. These results open a new opportunity to develop ultrathin memory devices based on rhombohedral-like heterostructures.</p>

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Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年1月30日

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  • Fanrong Lin,
  • Xiaoyu Xuan,
  • Zhonghan Cao,
  • Zhuhua Zhang,
  • Ying Liu,
  • Minmin Xue,
  • Yang Hang,
  • Xin Liu,
  • Yizhou Zhao,
  • Libo Gao,
  • Wanlin Guo,
  • Yanpeng Liu

摘要

The ferroelectricity in stacked van der Waals multilayers through interlayer sliding holds great promise for ultrathin high-density memory devices, yet mostly subject to weak polarization and cryogenic operating condition. Here, we demonstrate robust room-temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride layers with a rhombohedral-like stacking (i.e., ABC-like stacking). The system exhibits an unconventional negative capacitance and record high electric polarization of 1.76 μC/cm2 among reported sliding ferroelectrics to date. The ferroelectricity also exists in similarly sandwiched bilayer and trilayer graphene, yet the polarization is slightly decreased with odd-even parity. Ab initio calculations suggest that the ferroelectricity is associated with a unique switchable co-sliding motion between graphene and adjacent boron nitride layer, in contrast to existing conventional vdW sliding ferroelectrics. As such, the ferroelectricity can sustain up to 325 K and remains intact after 50000 switching cycles in ~300000 s duration at 300 K. These results open a new opportunity to develop ultrathin memory devices based on rhombohedral-like heterostructures.