Scholarlink

<p>Effective detection is critical for terahertz applications, yet it remains hindered by the unclear mechanisms that necessitate a deeper understanding of photosensitive materials with exotic physical phenomena. Here, we investigate the terahertz detection capabilities of the two-dimensional antiferromagnetic semimetal NbFeTe<sub>2</sub>. Our study reveals that the interaction between antiferromagnetic magnetic moments and electron spin induces disordered carriers to hop between localized states, resulting in a nonlinear increase in responsivity as temperature decreases. We integrate asymmetric electrodes to generate a sufficient Seebeck potential, enabling carriers to overcome the barrier of localized states and achieve reordering at room temperature. Additionally, the self-powered performance of the NbFeTe₂/graphene heterojunction is optimized by the built-in electric field, achieving peak responsivity of 220 V W<sup>-1</sup> and noise equivalent power of &lt;20 pW Hz<sup>-1/2</sup>. These results shed light on the potential of antiferromagnetic semimetals in large-area, high-speed imaging applications, marking a significant advancement in terahertz photonics.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Antiferromagnetic semimetal terahertz photodetectors enhanced through weak localization

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年1月2日

查看全文
  • Dong Wang,
  • Liu Yang,
  • Zhen Hu,
  • Fang Wang,
  • Yage Yang,
  • Xiaokai Pan,
  • Zhuo Dong,
  • Shijian Tian,
  • Libo Zhang,
  • Li Han,
  • Mengjie Jiang,
  • Keqin Tang,
  • Fuxing Dai,
  • Kai Zhang,
  • Wei Lu,
  • Xiaoshuang Chen,
  • Lin Wang,
  • Weida Hu

摘要

Effective detection is critical for terahertz applications, yet it remains hindered by the unclear mechanisms that necessitate a deeper understanding of photosensitive materials with exotic physical phenomena. Here, we investigate the terahertz detection capabilities of the two-dimensional antiferromagnetic semimetal NbFeTe2. Our study reveals that the interaction between antiferromagnetic magnetic moments and electron spin induces disordered carriers to hop between localized states, resulting in a nonlinear increase in responsivity as temperature decreases. We integrate asymmetric electrodes to generate a sufficient Seebeck potential, enabling carriers to overcome the barrier of localized states and achieve reordering at room temperature. Additionally, the self-powered performance of the NbFeTe₂/graphene heterojunction is optimized by the built-in electric field, achieving peak responsivity of 220 V W-1 and noise equivalent power of <20 pW Hz-1/2. These results shed light on the potential of antiferromagnetic semimetals in large-area, high-speed imaging applications, marking a significant advancement in terahertz photonics.