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<p>Electrostriction is the upsurge of strain under an electric field in any dielectric material. Oxygen-defective metal oxides, such as acceptor-doped ceria, exhibit high electrostriction 10<sup>-17</sup> m<sup>2</sup>V<sup>-2</sup> values, which can be further enhanced via interface engineering at the nanoscale. This effect in ceria is “non-classical” as it arises from an intricate relation between defect-induced polarisation and local elastic distortion in the lattice. Here, we investigate the impact of mismatch strain when epitaxial Gd-doped CeO<sub>2</sub> thin films are grown on various single-crystal substrates. We demonstrate that varying the compressive and tensile strain can fine-tune the electromechanical response. The electrostriction coefficients achieve a large <i>M</i><sub><i>11</i></sub> ≈ 3.6·10<sup>-15</sup> m<sup>2</sup>V<sup>-2</sup> in lattices of in-plane compressed films, i.e., a positive tetragonality (<i>c/a</i>-1 &gt; 0), with stress above 3 GPa at the film/substrate interface. Chemical and structural analysis suggests that the high electrostriction stems from anisotropic distortions in the local lattice strain, which lead to constructively oriented elastic dipoles and Ce<sup>3+</sup> electronic defects.</p>

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Enhanced non-classical electrostriction in strained tetragonal ceria

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年1月2日

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  • Simone Santucci,
  • Milica Vasiljevic,
  • Haiwu Zhang,
  • Victor Buratto Tinti,
  • Achilles Bergne,
  • Armando A. Morin-Martinez,
  • Sandeep Kumar Chaluvadi,
  • Pasquale Orgiani,
  • Simone Sanna,
  • Anton Lyksborg-Andersen,
  • Thomas Willum Hansen,
  • Ivano E. Castelli,
  • Nini Pryds,
  • Vincenzo Esposito

摘要

Electrostriction is the upsurge of strain under an electric field in any dielectric material. Oxygen-defective metal oxides, such as acceptor-doped ceria, exhibit high electrostriction 10-17 m2V-2 values, which can be further enhanced via interface engineering at the nanoscale. This effect in ceria is “non-classical” as it arises from an intricate relation between defect-induced polarisation and local elastic distortion in the lattice. Here, we investigate the impact of mismatch strain when epitaxial Gd-doped CeO2 thin films are grown on various single-crystal substrates. We demonstrate that varying the compressive and tensile strain can fine-tune the electromechanical response. The electrostriction coefficients achieve a large M11 ≈ 3.6·10-15 m2V-2 in lattices of in-plane compressed films, i.e., a positive tetragonality (c/a-1 > 0), with stress above 3 GPa at the film/substrate interface. Chemical and structural analysis suggests that the high electrostriction stems from anisotropic distortions in the local lattice strain, which lead to constructively oriented elastic dipoles and Ce3+ electronic defects.