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<p>This study reports the design of <i>n</i>-type (AB)<sub>n</sub> multiblock copolymers composed of a naphthalene–diimide (NDI)-based semiconducting polymer and polyisobutene (PIB) segments to elucidate how the PIB segment length and content affect thermal, mechanical, and charge-transport properties. All the copolymers exhibited high thermal stability, with 5% weight loss temperatures above 386 °C. Thin films containing 18–23 wt% PIB exhibited outstanding crack resistance and remained intact under strains up to 100%. At lower PIB contents (≤10 wt%), compared with those with longer PIB chains, copolymers with shorter PIB segments achieved significantly improved stretchability, indicating more efficient stress dissipation <i>via</i> uniform PIB dispersion. Grazing-incidence wide-angle X-ray scattering confirmed that the crystalline organization of semiconducting domains was largely retained after PIB incorporation. Under uniaxial strain, the lamellar spacing changed nonmonotonically, suggesting that stress is initially absorbed by PIB but subsequently transferred to the semiconducting matrix. Organic field-effect transistor measurements revealed only a minimal decrease in mobility (~13%) from 4 to 10 wt% PIB, whereas 18 wt% PIB caused a greater reduction (~50%); however, the electron mobility remained on the order of 10<sup>−3</sup> cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>. An optimal design window of low-molecular-weight PIB (~10 wt%) in a multiblock copolymer balances stretchability and electronic performance.</p>

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Synthesis and characterization of intrinsically stretchable naphthalene–diimide-based multiblock semiconducting copolymers with systematically tuned polyisobutene segments

  • 期刊论文

  • 发表日期：

    2026年5月8日

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  • Megumi Matsuda,
  • Naoki Matsuda,
  • Yudai Hemmi,
  • Rin Kobayashi,
  • Teruma Mikata,
  • Taichi Takahashi,
  • He Sun,
  • Tomoyuki Koganezawa,
  • Hiroyuki Matsui,
  • Tomoya Higashihara

摘要

This study reports the design of n-type (AB)n multiblock copolymers composed of a naphthalene–diimide (NDI)-based semiconducting polymer and polyisobutene (PIB) segments to elucidate how the PIB segment length and content affect thermal, mechanical, and charge-transport properties. All the copolymers exhibited high thermal stability, with 5% weight loss temperatures above 386 °C. Thin films containing 18–23 wt% PIB exhibited outstanding crack resistance and remained intact under strains up to 100%. At lower PIB contents (≤10 wt%), compared with those with longer PIB chains, copolymers with shorter PIB segments achieved significantly improved stretchability, indicating more efficient stress dissipation via uniform PIB dispersion. Grazing-incidence wide-angle X-ray scattering confirmed that the crystalline organization of semiconducting domains was largely retained after PIB incorporation. Under uniaxial strain, the lamellar spacing changed nonmonotonically, suggesting that stress is initially absorbed by PIB but subsequently transferred to the semiconducting matrix. Organic field-effect transistor measurements revealed only a minimal decrease in mobility (~13%) from 4 to 10 wt% PIB, whereas 18 wt% PIB caused a greater reduction (~50%); however, the electron mobility remained on the order of 10−3 cm2V−1s−1. An optimal design window of low-molecular-weight PIB (~10 wt%) in a multiblock copolymer balances stretchability and electronic performance.