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<p>The recovery lifetime postponement mechanism in solution-processed (SP) indium zinc oxide (IZO) thin-film transistors (TFTs) is analytically formulated under thermal and photo-annealing conditions. A quantitative density of states (DOS) model is employed to analyse charge transport dynamics and the impact of In molarity ratios on the retention lifetime and electrical stability. The photo-retention characteristics of IZO TFTs were examined during photo-annealing, showing that higher In molarity concentrations extend the retention lifetime. To quantify this behaviour, a recovery lifetime estimation method based on post-annealing and DOS distributions is proposed. A DOS–energy diagram describing the charge transition mechanism and its relationship with the atomic structure of SP IZO semiconductors is developed. A trade-off between the prolonged retention lifetime and recovery capability with increasing In molarity is noted. This work provides a detailed framework for understanding retention lifetime dynamics, stability, and performance of SP IZO TFTs, offering insights for their widespread application in sensor devices.</p>

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Retention framework for analysing trapping dynamics in solution-processed metal-oxide semiconductors

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年11月7日

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  • Dongwook Kim,
  • Hyeonju Lee,
  • Hyunji Shin,
  • Youngjun Yun,
  • Jin-Hyuk Bae,
  • Jaehoon Park

摘要

The recovery lifetime postponement mechanism in solution-processed (SP) indium zinc oxide (IZO) thin-film transistors (TFTs) is analytically formulated under thermal and photo-annealing conditions. A quantitative density of states (DOS) model is employed to analyse charge transport dynamics and the impact of In molarity ratios on the retention lifetime and electrical stability. The photo-retention characteristics of IZO TFTs were examined during photo-annealing, showing that higher In molarity concentrations extend the retention lifetime. To quantify this behaviour, a recovery lifetime estimation method based on post-annealing and DOS distributions is proposed. A DOS–energy diagram describing the charge transition mechanism and its relationship with the atomic structure of SP IZO semiconductors is developed. A trade-off between the prolonged retention lifetime and recovery capability with increasing In molarity is noted. This work provides a detailed framework for understanding retention lifetime dynamics, stability, and performance of SP IZO TFTs, offering insights for their widespread application in sensor devices.