Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect
摘要
In this study, using the Pt/Cr2O3/Pt epitaxial trilayer, we demonstrate the giant voltage modulation of the antiferromagnetic spin reversal and the voltage-induced 180° switching of the Néel vector in maintaining a permanent magnetic field. We obtained a significant modulation efficiency of the switching field, Δμ0HSW/ΔV (Δμ0HSW/ΔE), reaching a maximum of −500 mT/V (−4.80 T nm/V); this value was more than 50 times greater than that of the ferromagnetic-based counterparts. From the temperature dependence of the modulation efficiency, X-ray magnetic circular dichroism measurements and first-principles calculations, we showed that the origin of the giant modulation efficiency relied on the electric field modulation of the net magnetization due to the magnetoelectric effect. From the first-principles calculation and the thickness effect on the offset electric field, we found that the interfacial magnetoelectric effect emerged. Our demonstration reveals the energy-efficient and widely applicable operation of an antiferromagnetic spin based on a mechanism distinct from magnetic anisotropy control.