Unveiling the roles of device structure and driving frequency in mitigating crosstalk effects in nanopixel light-emitting displays

The noncarrier injection (NCI) mode holds promise for application in nanopixel light-emitting display to enhance the competitiveness of display technology. However, conventional approaches face challenges in fabricating NCI mode light-emitting arrays that simultaneously achieve pixel-level precision and high emission quality. In this work, the effect of electrical crosstalk in NCI mode array is revealed by the finite element simulation and the effective suppression of crosstalk is proved by experimental tests. The mechanism of crosstalk is revealed by the dynamic variation of carrier concentration and circuit model analysis. It is demonstrated that adjacent nLEDs show different electrical crosstalk phenomena in changing voltage amplitude, voltage frequency, insulation thickness and the distance between adjacent nLEDs. According to the analysis, we propose a crosstalk suppression solution, that is reducing the etching depth of the nLED array. Finally, by comparing the difference in the working characteristics of the array in injection mode and NCI mode, it is demonstrated the crosstalk suppression capability of the NCI mode. This work provides valuable theories for understanding the NCI mode and opens a new perspective for the display technology related to the nLED array.