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<p>The suppression of in-band ripple and enhancement of power-handling capability (PHC) represent critical research imperatives for next-generation super-high-frequency (SHF) wideband filters. This study presents a laterally-excited bulk acoustic resonator with scattering vias in double-layer electrodes (SV-BAR) and its filter for sub-6G SHF wideband applications, to simultaneously suppress spurious modes by curved scattering boundaries and enhance PHC by gold-filled double-layer electrodes. Fabricated on a 358 nm Z-cut LiNbO<sub>3</sub>-on-insulator (LNOI) substrate using a four-mask ion beam etching process, the SV-BAR achieves a <i>K</i><sub>t</sub><sup>2</sup> of 24.1%, a Bode_<i>Q</i><sub>max</sub> of 366 at 5.946 GHz, as well as a remarkable product of merit (PoM, <i>f</i>·Bode_<i>Q</i><sub>max</sub>·<i>K</i><sub>t</sub><sup>2</sup>) of 5.24 × 10<sup>11 </sup>Hz. In addition, the compact 2.5-order mirror ladder filter (1.949 mm² footprint) exhibits a center frequency of 5.8585 GHz, a 9.71% fractional bandwidth (569 MHz), 23.97 dB out-of-band rejection, and a temperature coefficient of frequency (TCF) of -64.04 ppm/°C. Notably, it demonstrates exceptional PHC of +30.88 dBm at 6.162 GHz (1-dB compression point), attributed to its mechanical stability, low ohmic loss, and thermal stability (3-dB lower cutoff TCF<sub>l</sub> = -84.11 ppm/°C vs. upper cutoff TCF<sub>h</sub> = -45.83 ppm/°C). This breakthrough enables ultra-wideband, miniaturized filters in next-generation wireless systems.</p><p></p>

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Sub-6 GHz acoustic filters using laterally-excited bulk acoustic resonator with scattering vias in double-layer electrodes

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月3日

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  • Zhiwei Wen,
  • Wenjuan Liu,
  • Min Zeng,
  • Jieyu Liu,
  • Yuanhang Qu,
  • Ronghui Wang,
  • Yan Liu,
  • Yao Cai,
  • Chengliang Sun

摘要

The suppression of in-band ripple and enhancement of power-handling capability (PHC) represent critical research imperatives for next-generation super-high-frequency (SHF) wideband filters. This study presents a laterally-excited bulk acoustic resonator with scattering vias in double-layer electrodes (SV-BAR) and its filter for sub-6G SHF wideband applications, to simultaneously suppress spurious modes by curved scattering boundaries and enhance PHC by gold-filled double-layer electrodes. Fabricated on a 358 nm Z-cut LiNbO3-on-insulator (LNOI) substrate using a four-mask ion beam etching process, the SV-BAR achieves a Kt2 of 24.1%, a Bode_Qmax of 366 at 5.946 GHz, as well as a remarkable product of merit (PoM, f·Bode_Qmax·Kt2) of 5.24 × 1011 Hz. In addition, the compact 2.5-order mirror ladder filter (1.949 mm² footprint) exhibits a center frequency of 5.8585 GHz, a 9.71% fractional bandwidth (569 MHz), 23.97 dB out-of-band rejection, and a temperature coefficient of frequency (TCF) of -64.04 ppm/°C. Notably, it demonstrates exceptional PHC of +30.88 dBm at 6.162 GHz (1-dB compression point), attributed to its mechanical stability, low ohmic loss, and thermal stability (3-dB lower cutoff TCFl = -84.11 ppm/°C vs. upper cutoff TCFh = -45.83 ppm/°C). This breakthrough enables ultra-wideband, miniaturized filters in next-generation wireless systems.