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<p>Mn-doped BiFeO<sub>3</sub> (BFMO) epitaxial films grown on (100) Si wafers delivered enhanced electrical and piezoelectric properties under systematically optimized growth conditions, realized through a biaxial combinatorial sputtering method. The dielectric constant and dielectric loss of the resulting BFMO films were approximately 140 and 1%, respectively, considerably lower than those of undoped BiFeO<sub>3</sub>. Most notably, the effective transverse piezoelectric coefficient was –6.0 C/m<sup>2</sup>, the highest yet reported for this material system. According to detailed structural and electrical characterizations, the improved piezoelectric performance stems from a strain-induced phase transition from the rhombohedral to the monoclinic structure. To demonstrate this enhancement beyond the material level, the optimized films were successfully integrated into piezoelectric MEMS vibration-energy harvesters. The films demonstrated device-level performance improvements with a generalized electromechanical coupling factor <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(({K}^{2})\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mo>(</mo> <msup> <mrow> <mi>K</mi> </mrow> <mn>2</mn> </msup> <mo>)</mo> </mrow> </math></EquationSource> </InlineEquation> of 0.5%, fivefold that of (100) oriented BFO films.</p><p></p>

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Enhanced electromechanical coupling in piezoelectric MEMS vibration energy harvesters via strain-induced phase transition in Mn-doped bismuth ferrite epitaxial films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月17日

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  • Sengsavang Aphayvong,
  • Meika Takagi,
  • Kira Fujihara,
  • Yohane Fujibayashi,
  • Norifumi Fujimura,
  • Hidemasa Yamane,
  • Shuichi Murakami,
  • Takeshi Yoshimura

摘要

Mn-doped BiFeO3 (BFMO) epitaxial films grown on (100) Si wafers delivered enhanced electrical and piezoelectric properties under systematically optimized growth conditions, realized through a biaxial combinatorial sputtering method. The dielectric constant and dielectric loss of the resulting BFMO films were approximately 140 and 1%, respectively, considerably lower than those of undoped BiFeO3. Most notably, the effective transverse piezoelectric coefficient was –6.0 C/m2, the highest yet reported for this material system. According to detailed structural and electrical characterizations, the improved piezoelectric performance stems from a strain-induced phase transition from the rhombohedral to the monoclinic structure. To demonstrate this enhancement beyond the material level, the optimized films were successfully integrated into piezoelectric MEMS vibration-energy harvesters. The films demonstrated device-level performance improvements with a generalized electromechanical coupling factor \(({K}^{2})\) ( K 2 ) of 0.5%, fivefold that of (100) oriented BFO films.