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<p>With the surge in fifth-generation (5G) wireless systems and escalating growth of data traffic, the push for higher carrier frequencies with wider bandwidths intensifies. This work reveals the outstanding capabilities of wafer-level longitudinal leaky surface acoustic wave (LLSAW) devices on the lithium niobate on insulator (LNOI) platform in scaling SAW technology beyond 4 GHz by mass-produced lithography. Leveraging SiC-based LNOI, the fabricated LLSAW resonators showcase remarkable quality factor (<i>Q</i>), scalable electromechanical factor <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="41378_2025_1007_Article_IEq1.gif" Format="GIF" Height="23" Rendition="HTML" Resolution="72" Type="Linedraw" Width="39" /> </InlineMediaObject> <EquationSource Format="TEX">\(\left({k}_{\text{eff}}^{2}\right)\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mfenced close=")" open="("> <mrow> <msubsup> <mrow> <mi>k</mi> </mrow> <mrow> <mtext>eff</mtext> </mrow> <mrow> <mn>2</mn> </mrow> </msubsup> </mrow> </mfenced> </mrow> </math></EquationSource> </InlineEquation> from 14% to 28%, and record high figure-of-merit (FoM) of 166 to 222 at 5–6 GHz. Targeted for diverse bands, LLSAW filters with adaptable bandwidths have been realized on specific LN-on-SiC platforms. The filters covering the n79 full band with a minimum insertion loss (<i>IL</i><sub>min</sub>) of 0.85 dB and the 5 GHz Wi-Fi full band with an <i>IL</i><sub>min</sub> of 1.62 dB, have been demonstrated for the first time. These findings position LLSAW on LN-on-SiC platform as a promising commercial-grade candidate for pushing the SAW paradigm towards high frequency and wideband filtering.</p><p></p>

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Scaling LLSAW filters on engineered LiNbO3-on-SiC wafer for 5G and Wi-Fi 6 wideband applications

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  • 出版模式：

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  • 发表日期：

    2025年8月11日

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  • Peisen Liu,
  • Sulei Fu,
  • Boyuan Xiao,
  • Xinchen Zhou,
  • Qiufeng Xu,
  • Jiajun Gao,
  • Shuai Zhang,
  • Rui Wang,
  • Cheng Song,
  • Fei Zeng,
  • Weibiao Wang,
  • Feng Pan

摘要

With the surge in fifth-generation (5G) wireless systems and escalating growth of data traffic, the push for higher carrier frequencies with wider bandwidths intensifies. This work reveals the outstanding capabilities of wafer-level longitudinal leaky surface acoustic wave (LLSAW) devices on the lithium niobate on insulator (LNOI) platform in scaling SAW technology beyond 4 GHz by mass-produced lithography. Leveraging SiC-based LNOI, the fabricated LLSAW resonators showcase remarkable quality factor (Q), scalable electromechanical factor \(\left({k}_{\text{eff}}^{2}\right)\) k eff 2 from 14% to 28%, and record high figure-of-merit (FoM) of 166 to 222 at 5–6 GHz. Targeted for diverse bands, LLSAW filters with adaptable bandwidths have been realized on specific LN-on-SiC platforms. The filters covering the n79 full band with a minimum insertion loss (ILmin) of 0.85 dB and the 5 GHz Wi-Fi full band with an ILmin of 1.62 dB, have been demonstrated for the first time. These findings position LLSAW on LN-on-SiC platform as a promising commercial-grade candidate for pushing the SAW paradigm towards high frequency and wideband filtering.